Semiconductor package and method of fabricating the same

A method of fabricating a semiconductor package, the method comprising:

• forming a lower layer including a conductive pattern;
• forming a dielectric layer on the lower layer, the dielectric layer comprising photosensitive polymer;
• forming a hardmask pattern on the dielectric layer;
• forming a plurality of trenches by performing an anisotropic etching process on a portion of the dielectric layer using the hardmask pattern as an etching mask;
• removing the hardmask pattern to expose a top surface of the dielectric layer;
• forming a metal layer on the dielectric layer to fill the plurality of trenches;
• and
• forming redistribution patterns in the trenches by performing a planarization process on the metal layer,
• wherein the each of the redistribution patterns has a bottom surface that is upwardly convex.

A method of fabricating a semiconductor package, the method comprising:

• forming a lower layer including a conductive pattern
• forming a photosensitive polymer layer covering the conductive pattern on the lower layer;
• forming a hardmask layer on the photosensitive polymer layer;
• forming a photoresist pattern on the hardmask layer;
• forming a hardmask pattern on the photosensitive polymer layer using the photoresist pattern as an etching mask to etch the hardmask layer;
• and
• forming a plurality of trenches using the hardmask pattern as an etching mask to etch a portion of the photosensitive polymer layer, wherein the plurality of trenches extend parallel to each other in one direction;
• removing the hardmask pattern to expose a top surface of the photosensitive polymer layer;
• forming a metal layer on the photosensitive polymer layer to fill the plurality of trenches;
• and
• forming redistribution patterns in the trenches by performing a planarization process on the metal layer,
• wherein forming the hardmask pattern includes forming on the photosensitive polymer layer a plurality of preliminary trenches that extend parallel to each other in the one direction,
• wherein each of the preliminary trenches has a depth that is greater at an edge portion of the preliminary trench than at a central portion of the preliminary trench, and
• wherein each of the trenches includes a bottom surface that is upwardly convex and rounded edges between the bottom surface and sidewalls of the trench.