Manufacturing method of diamond composite wafer

A method to form a first diamond composite wafer, a second diamond composite wafer, a third diamond composite wafer or a fourth diamond composite wafer with a first predetermined diameter, comprising:

• (a) attaching a plurality of diamond blocks and a plurality of semiconductor blocks to a first temporary carrier with the first predetermined diameter to form a first temporary composite wafer, wherein both a dimension of each diamond block and a dimension of each semiconductor block are smaller than the first predetermined diameter, and a thermal conductivity of the semiconductor block is smaller than that of the diamond block;
• and
• (b) filling gaps among the plurality of diamond blocks and gaps among the plurality of semiconductor blocks, and removing the first temporary carrier to form the fourth diamond composite wafer;
• or attaching the fourth diamond composite wafer to a first semiconductor substrate with the first predetermined diameter to form the second diamond composite wafer;
• or removing the plurality of semiconductor blocks from the second diamond composite wafer to form the first diamond composite wafer;
• or removing the plurality of semiconductor blocks from the fourth diamond composite wafer to form the third diamond composite wafer.

A method to form a first diamond composite IC wafer or a second diamond composite IC wafer, comprising:

• preparing a first semiconductor wafer with a first predetermined diameter, wherein the first semiconductor wafer includes a set of IC circuits on a first side of the first semiconductor wafer;
• preparing a plurality of diamond blocks or a diamond wafer with the first predetermined diameter;
• bonding the plurality of diamond blocks to the first semiconductor wafer, and filling gaps among the plurality of diamond blocks to form the first diamond composite IC wafer;
• or bonding the diamond wafer to the first semiconductor wafer to form the second diamond composite IC wafer.