Structure with inductor embedded in bonded semiconductor substrates and methods

A method comprising:

• forming a first spiral-shape metallic feature in a first semiconductor substrate;
• forming a second spiral-shaped metallic feature in a second semiconductor substrate;
• and
• forming a structure comprising the first semiconductor substrate and the second semiconductor substrate, wherein the second semiconductor substrate is in contact with the first semiconductor substrate, wherein the second spiral-shaped metallic feature is electrically connected to the first spiral-shaped metallic feature, and wherein turns of the second spiral-shaped metallic feature are immediately adjacent to turns of the first spiral-shaped metallic feature.

A structure comprising:

• a first semiconductor substrate;
• a second semiconductor substrate in contact with the first semiconductor substrate;
• a first spiral-shape metallic feature in the first semiconductor substrate;
• and
• a second spiral-shaped metallic feature in the second semiconductor substrate and electrically connected to the first spiral-shaped metallic feature,
• wherein the first semiconductor substrate and the second semiconductor substrate have bonded surfaces,
• wherein the first spiral-shaped metallic feature and the second spiral-shaped metallic feature have essentially identical horizontal cross-sections,
• wherein the second spiral-shaped metallic feature is stacked above and immediately adjacent to the first spiral-shaped metallic feature at the bonded surfaces of the first semiconductor substrate and the second semiconductor substrate to form an inductor,
• wherein the first semiconductor substrate has first opposing surfaces,
• wherein the second semiconductor substrate has second opposing surfaces,
• wherein a first opposing surface is bonded to a second opposing surface,
• wherein the first spiral-shaped metallic feature extends into the first semiconductor substrate from the first opposing surface that is bonded to the second opposing surface, and
• wherein the second spiral-shaped metallic feature extends between the second opposing surfaces through the second semiconductor substrate,
• wherein the first spiral-shaped metallic feature comprises:
• a first spiral-shaped opening in the first semiconductor substrate;
• a first dielectric liner lining first horizontal and vertical surfaces of the first spiral-shaped opening;
• and a first metallic fill material on the first dielectric liner filling the first spiral-shaped opening, and
• wherein the second spiral-shaped metallic feature comprises:
• a second spiral-shaped opening in the second semiconductor substrate;
• a second dielectric liner lining second vertical surfaces of the second spiral-shaped opening;
• and a second metallic fill material filling the second spiral-shaped opening and immediately adjacent to the first metallic fill material.