Three dimensional MIM capacitor having a comb structure and methods of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe Wei Yang, Tsun-Kai Tsao, Sheng-Chau Chen, Sheng-Chan Li, Cheng-Yuan Tsai
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Abstract
Metal-insulator-metal (MIM) capacitor, an integrated semiconductor device having a MIM capacitor and methods of making. The MIM capacitor includes a first metal layer, a second metal layer and a dielectric layer located between the second metal layer and the first metal layer. The first metal layer, the second metal layer and the dielectric layer may be formed in a comb structure, wherein the comb structure include a first tine structure and at least a second tine structure.
Claims20
A semiconductor device, comprising:
- a substrate;
- a dielectric layer over the substrate;
- a capacitor in the dielectric layer, comprising:
- a first trench;
- a second trench;
- a third trench, wherein the first trench is between the second trench and the third trench and each of the first trench, second trench and third trench comprises a conductive material, wherein the second trench and the third trench have a similar depth that is smaller than a depth of the first trench;
- and
- a via at least partially overlapping the first trench, and electrically connecting to the capacitor.
A semiconductor device, comprising:
- a substrate;
- a first dielectric layer over the substrate;
- a capacitor in the first dielectric layer, comprising:
- a first metal layer;
- a second metal layer having a planarized top surface;
- a second dielectric layer located between the second metal layer and the first metal layer;
- and
- a via over the capacitor, wherein a bottom surface of the via is lower than the top surface of the second metal layer.
A semiconductor device, comprising:
- a metal line;
- a capacitor over the metal line, the capacitor comprising:
- a first metal layer;
- a second metal layer;
- a dielectric layer located between the first metal layer and the second metal layer, wherein the first metal layer, the second metal layer, and the dielectric layer are located in a first trench having a first depth and a second trench having a second depth varying from the first depth, and wherein at least one of the first metal layer, the second metal layer, and the dielectric layer vertically overlaps the metal line between the first trench and the second trench.
Dependencies are inferred from the claim text.