Semiconductor device including dielectrics made of porous organic frameworks, and method of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSzu-Hua Chen, Wei-Yen Woon, Szuya Liao
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Abstract
A semiconductor device includes a substrate and an interconnection layer disposed on the substrate. The interconnection layer includes a plurality of etch-stop layers, a plurality of first dielectric layers, and a plurality of conductive layers. The first dielectric layers are disposed on the plurality of etch-stop layers, wherein the plurality of first dielectric layers comprises porous organic framework (POF) dielectrics having a dielectric constant of 2 or less, and a thermal conductivity of 1 W/(m·K) or more. The conductive layers are embedded in the first dielectric layers.
Claims20
A semiconductor device, comprising:
- a substrate;
- an interconnection layer disposed on the substrate, wherein the interconnection layer comprises:
- a plurality of etch-stop layers;
- a plurality of first dielectric layers disposed on the plurality of etch-stop layers, wherein the plurality of first dielectric layers comprises porous organic framework (POF) dielectrics having a dielectric constant of 2 or less, and a thermal conductivity of 1 W/(m·K) or more;
- a plurality of second dielectric layers disposed on the plurality of etch-stop layers, wherein the plurality of second dielectric layers comprises porous organic framework (POF) dielectrics having a dielectric constant of 2 or less, and a thermal conductivity of 1 W/(m·K) or more, and the plurality of second dielectric layers is different from a material of the plurality of first dielectric layers;
- and
- a plurality of conductive layers embedded in the plurality of first dielectric layers.
A semiconductor device, comprising:
- a substrate;
- an interconnection layer disposed on the substrate, wherein the interconnection layer comprises:
- a first covalent organic framework (COF) layer disposed on the substrate;
- a first conductive layer surrounded by the first COF layer;
- a second COF layer disposed on the first COF layer, wherein a thermal conductivity of the second COF layer is higher than the first COF layer;
- and
- a second conductive layer surrounded by the second COF layer;
- a passivation layer disposed on the interconnection layer;
- and
- conductive terminals disposed on the passivation layer and electrically connected to the interconnection layer.
A method of fabricating a semiconductor device, comprising:
- providing a substrate;
- forming an interconnection layer on the substrate, wherein forming the interconnection layer comprises:
- forming a first covalent organic framework (COF) layer on the substrate;
- patterning the first COF layer to form a first opening, and forming a first conductive layer in the first opening so that it is surrounded by the first COF layer;
- forming a second COF layer on the first COF layer, wherein a thermal conductivity of the second COF layer is higher than the first COF layer;
- and
- patterning the second COF layer to form a second opening, and forming a second conductive layer in the second opening so that it is surrounded by the second COF layer;
- forming a passivation layer on the interconnection layer;
- and
- forming conductive terminals on the passivation layer and electrically connected to the interconnection layer.
Dependencies are inferred from the claim text.