Semiconductor device structure with energy removable structure and method for preparing the same

A semiconductor device structure, comprising:

• a first dielectric layer disposed on and in direct contact with a top surface of a semiconductor substrate;
• a first energy removable structure disposed in and surrounded by the first dielectric layer and in contact with the top surface of the semiconductor substrate, wherein a top surface of the first energy removable structure is coplanar with a top surface of the first dielectric layer;
• a second dielectric layer disposed on and in direct contact with the top surface of the first dielectric layer, wherein the second dielectric layer is positioned above the first energy removable structure;
• an Nth dielectric layer disposed over the second dielectric layer, wherein the N is an integer greater than 2, wherein the Nth dielectric layer has a first recess indented from a top surface thereof,
• a first conductor disposed in the first recess of the Nth dielectric layer at a position that a bottom surface of the first conductor is higher than a bottom surface of the Nh dielectric layer;
• and
• an (N+1)th dielectric layer disposed over and in contact with the Nth dielectric layer, wherein a top surface of the first conductor is exposed by a first opening, and a top surface of the first energy removable structure is exposed by a second opening;
• wherein the first opening is extended through the (N+1)th dielectric layer to expose the top surface of the first conductor, such that the top surface of the first conductor forms a bottom surface of the first opening;
• wherein the second opening is extended through the (N+1)th dielectric layer, the Nth dielectric layer, and the second dielectric layer to expose the top surface of the first energy removable structure, such that the top surface of the first energy removable structure forms a bottom surface of the second opening;
• wherein the top surface of the first conductor is positioned higher than the top surface of the first energy removable structure;
• wherein the bottom surface of the first opening is higher than the bottom surface of the second opening, such that a depth of the first opening is less than a depth of the second opening;
• wherein the depth of the first opening is a distance between a top surface of the (N+1)th dielectric layer and the top surface of the first conductor;
• wherein the depth of the second opening is a distance between the top surface of the (N+1)th dielectric layer and the top surface of the first energy removable structure;
• further comprising:
• a second conductor disposed in the (N+1)th dielectric layer,
• wherein the of the (N+1)th dielectric layer has a second recess indented from the top surface thereof, wherein the second conductor disposed in the second recess of the (N+1)th dielectric layer at a position that a bottom surface of the second conductor is higher than a bottom surface of the (N+1)th dielectric layer;
• further comprising:
• an (N+2)th dielectric layer disposed over the (N+1)th dielectric layer, wherein a top surface of the second conductor is exposed by a third opening;
• wherein the third opening is extended through the (N+2)th dielectric layer to expose the top surface of the second conductor, such that the top surface of the second conductor forms a bottom surface of the third opening;
• wherein the bottom surface of the third opening is higher than the bottom surface of the first opening, such that a depth of the third opening is less than the depth of the first opening;
• wherein the depth of the third opening is a distance between a top surface of the (N+2)th dielectric layer and the top surface of the third conductor;
• wherein the depth of the first opening is a distance between a top surface of the (N+2)th dielectric layer and the top surface of the first conductor when the (N+2)th dielectric layer is disposed on the (N+1)th dielectric layer;
• wherein the depth of the second opening is a distance between the top surface of the (N+2)th dielectric layer and the top surface of the first energy removable structure when the (N+2)th dielectric layer is disposed on the (N+1)th dielectric layer.