# US 12,593,673 B2 · Semiconductor structure and method making the same

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- Number: US 12,593,673 B2
- Document ID: US12593673B2
- Status: Granted
- Kind: B2
- Application number: 18/519,516
- Filed: 2023-11-27
- Published: 2024-03-14
- Granted: 2026-03-31
- Earliest claimed: 2013-12-13
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Hsin-Yen Huang; Kai-Fang Cheng; Chi-Lin Teng; Hai-Ching Chen; Tien-I Bao
- Web page: https://patentgrep.com/patent/US12593673B2

## CPC

- H10W 20/42: Vias, e.g. via plugs
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/69391: {the material containing aluminium, e.g. Al2O3}
- H10P 50/283: {by chemical means}
- H10W 20/037: {the barrier, adhesion or liner layers being on top of a main fill metal}
- H10W 20/075: {of multilayered thin functional dielectric layers}
- H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)}
- H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants
- H10W 20/48: Insulating materials thereof
- H10W 20/084: {for dual-damascene structures}
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive feature; forming a low-k dielectric layer on the Al-containing dielectric layer; and etching the low-k dielectric layer to form a contact trench aligned with the conductive feature. A bottom of the contact trench is on a surface of the Al-containing dielectric layer.

## Claims

### Claim 1

A structure, comprising:
a first conductive feature, wherein the first conductive feature includes a first metal contact, a first metal via, or a first metal line of an interconnect structure;
a first dielectric layer located over the first conductive feature, wherein the first dielectric layer contains aluminum, oxygen, and nitrogen, wherein a weight of the aluminum in the first dielectric layer is less than a weight of the nitrogen in the first dielectric layer, and wherein the weight of the nitrogen is less than a weight of the oxygen in the first dielectric layer;
a second dielectric layer located over the first dielectric layer, wherein the second dielectric layer and the first dielectric layer have different material compositions; and
a second conductive feature that extends vertically at least in part through the second dielectric layer, wherein the second conductive feature is partially aligned with the first conductive feature, and wherein the second conductive feature includes a second metal contact, a second metal via, or a second metal line of the interconnect structure.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the first dielectric layer is porous.

### Claim 3 (depends on 1)

The structure of claim 1, wherein the second dielectric layer contains fluorinated silica glass (FSG), carbon doped silicon oxide, Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, bis-benzocyclobutenes (BCB), or polyimide.

### Claim 4 (depends on 1)

The structure of claim 1, further comprising a cap layer located between the first conductive feature and the first dielectric layer.

### Claim 5 (depends on 4)

The structure of claim 4, wherein the cap layer is aligned with the first conductive feature.

### Claim 6 (depends on 1)

The structure of claim 1, further comprising an etching stop layer located between the first dielectric layer and the second dielectric layer.

### Claim 7 (depends on 6)

The structure of claim 6, wherein the etching stop layer contains nitrogen (N) doped silicon carbide (SiC), or oxygen (O) doped SiC.

### Claim 8 (depends on 6)

The structure of claim 6, wherein:
the second conductive feature extends vertically at least in part through the etching stop layer but stops at the first dielectric layer; and
an upper surface of the etching stop layer is in direct contact with a lower surface of the second dielectric layer.

### Claim 9 (depends on 8)

The structure of claim 8, wherein:
the second conductive feature includes a first portion and a second portion below the first portion; and
the first portion is substantially wider than the second portion in a cross-sectional side view.

### Claim 10 (depends on 8)

The structure of claim 8, further comprising:
a cap layer located over the second conductive feature; and
a third dielectric layer located over the cap layer and over the second dielectric layer, wherein the third dielectric layer and the first dielectric layer have substantially similar material compositions.

### Claim 11

A structure, comprising:
a first conductive feature disposed over a substrate;
a first dielectric layer located over the first conductive feature, wherein the first dielectric layer is porous and has a single material composition, wherein the single material composition contains aluminum, nitrogen, or oxygen;
a second dielectric layer located over the first dielectric layer, wherein the second dielectric layer and the first dielectric layer have different material compositions;
a second conductive feature embedded at least partially in the second dielectric layer; and
a third dielectric layer located over the second conductive feature and over the second dielectric layer, wherein the third dielectric layer is porous and contains aluminum, nitrogen, or oxygen.

### Claim 12 (depends on 11)

The structure of claim 11, wherein within the first dielectric layer or within the third dielectric layer:
a weight of the aluminum is less than a weight of the nitrogen; and
a weight of the nitrogen is less than a weight of the oxygen.

### Claim 13 (depends on 11)

The structure of claim 11, wherein a bottommost surface of the second dielectric layer is in direct physical contact with an uppermost surface of the first dielectric layer.

### Claim 14 (depends on 11)

The structure of claim 11, further comprising an etching stop layer located between the first dielectric layer and the second dielectric layer, wherein:
a bottommost surface of the second dielectric layer is in direct physical contact with an uppermost surface of the etching stop layer; and
the etching stop layer and the first dielectric layer have different material compositions.

### Claim 15 (depends on 11)

The structure of claim 11, further comprising:
a first cap layer disposed between the first conductive feature and the first dielectric layer, wherein a bottom surface of the first cap layer is in direct contact with the first conductive feature but not with the substrate; and
a second cap layer disposed between the second conductive feature and the third dielectric layer, wherein a bottom surface of the second cap layer is in direct contact with the second conductive feature but not with the second dielectric layer.

### Claim 16 (depends on 11)

The structure of claim 11, wherein a bottommost surface of the second conductive feature is disposed above an uppermost surface of the first dielectric layer.

### Claim 17 (depends on 11)

The structure of claim 11, wherein the first dielectric layer is porous.

### Claim 18

A structure, comprising:
a first conductive feature, wherein the first conductive feature includes a first metal contact, a first metal via, or a first metal line of an interconnect structure;
a first cap layer located over, and aligned with, the first conductive feature, wherein the first cap layer contains cobalt (Co), manganese (Mn), nickel (Ni), ruthenium (Ru), or titanium (Ti);
a first dielectric layer located over an entire upper surface of the first cap layer in a cross-sectional side view, wherein the first dielectric layer contains aluminum;
a second dielectric layer located over the first dielectric layer, wherein the second dielectric layer and the first dielectric layer have different material compositions, and wherein a bottom surface of the second dielectric layer extends to a top surface of the first dielectric layer;
a second conductive feature embedded in the second dielectric layer, wherein the second conductive feature includes a second metal contact, a second metal via, or a second metal line of the interconnect structure;
a second cap layer located over, and aligned with, the second conductive feature, wherein the second cap layer and the first cap layer have a same material composition; and
a third dielectric layer located over the second cap layer and over the second dielectric layer, wherein the third dielectric layer and the first dielectric layer have substantially similar material compositions.

### Claim 19 (depends on 18)

The structure of claim 18, wherein the first dielectric layer and the third dielectric layer each further contain nitrogen and oxygen, and wherein within the first dielectric layer or within the third dielectric layer:
a weight of the aluminum is less than a weight of the nitrogen; and
a weight of the nitrogen is less than a weight of the oxygen.

### Claim 20 (depends on 18)

The structure of claim 18, wherein the second conductive feature is partially misaligned with the first conductive feature.