Contact formation method and related structure

A device, comprising:

• a gate structure including a metal gate, wherein a sidewall spacer is disposed on a sidewall of the gate structure;
• a first metal layer adjacent to the gate structure and in contact with a substrate region adjacent to the gate structure, wherein a first top surface of the first metal layer is level with a second top surface of the gate structure and with a third top surface of the sidewall spacer;
• and
• a dielectric layer over the gate structure and the first metal layer, wherein the dielectric layer includes a composite opening filled with a second metal layer;
• wherein a first part of the second metal layer disposed in a first portion of the composite opening contacts the metal gate of the gate structure;
• and
• wherein a second part of the second metal layer disposed in a second portion of the composite opening contacts the first metal layer adjacent to the gate structure.

A device, comprising:

• a metal gate layer, wherein a sidewall spacer is disposed on a sidewall of the metal gate layer;
• a source/drain metal layer parallel to the metal gate layer in a top view, wherein a first top surface of the source/drain metal layer is level with both a second top surface of the metal gate layer and a third top surface of the sidewall spacer in a side view;
• and
• a local interconnect, wherein a first end of the local interconnect contacts the metal gate layer, wherein a second end of the local interconnect contacts the source/drain metal layer, and wherein a middle portion of the local interconnect interposes the first and second ends of the local interconnect, the middle portion of the local interconnect separated from the sidewall spacer by a portion of a contact etch stop layer.