Shallow and deep contacts with stitching
AssigneeInternational Business Machines Corporation
InventorsSu Chen Fan, Stuart Sieg, Dominik Metzler, Indira Seshadri, Junli Wang
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes an interlayer dielectric layer; and a plurality of metal contacts formed in the interlayer dielectric layer. The plurality of metal contacts include a plurality of shallow metal contacts having a first depth, and a plurality of deep metal contacts having a second depth that is greater than the first depth, wherein a first one of the shallow metal contacts overlaps and directly contacts a first one of the deep metal contacts, and wherein the plurality of metal contacts have an equal spacing therebetween.
Claims20
A semiconductor structure comprising:
- an interlayer dielectric layer;
- and
- a plurality of metal contacts formed in the interlayer dielectric layer, the plurality of metal contacts including
- a plurality of shallow metal contacts having a first depth, and
- a plurality of deep metal contacts having a second depth that is greater than the first depth,
- wherein a first one of the shallow metal contacts overlaps and directly contacts a top surface of a first one of the deep metal contacts to form a combined contact, and
- wherein a distance between the combined contact and immediately adjacent metal contacts is the same as a distance between adjacent shallow metal contacts.
A method of manufacturing a semiconductor structure, the method comprising:
- forming a plurality of metal contacts in an interlayer dielectric layer, the plurality of metal contacts including
- a plurality of shallow metal contacts having a first depth, and
- a plurality of deep metal contacts having a second depth that is greater than the first depth,
- wherein a first one of the shallow metal contacts overlaps and directly contacts a top surface of a first one of the deep metal contacts to form a combined contact, and
- wherein a distance between the combined contact and immediately adjacent metal contacts is the same as a distance between adjacent shallow metal contacts.
Dependencies are inferred from the claim text.