# US 12,593,664 B2 · Method of manufacturing structure and method of manufacturing capacitor

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- Number: US 12,593,664 B2
- Document ID: US12593664B2
- Status: Granted
- Kind: B2
- Application number: 18/183,534
- Filed: 2023-03-14
- Published: 2023-09-21
- Granted: 2026-03-31
- Earliest claimed: 2022-03-18
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Mitsuo Sano; Susumu Obata; Kazuhito Higuchi; Takayuki Tajima
- Web page: https://patentgrep.com/patent/US12593664B2

## CPC

- H10D 1/665: {Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors}
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)}
- H10D 1/047: {of conductor-insulator-semiconductor capacitors, e.g. trench capacitors}
- H10D 1/692: {Electrodes}
- H01G 4/012: Form of non-self-supporting electrodes
- H10D 1/716: {having vertical extensions}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)

## Abstract

In general, according to one embodiment, there is provided a method of manufacturing a structure. The method includes forming a recess in a semiconductor substrate; oxidizing at least a bottom inner surface of the recess; and providing at least the bottom inner surface of the recess with a liquid capable of dissolving an oxide of a semiconductor substrate material.

## Claims

### Claim 1

A method of manufacturing a structure, comprising:
forming a recess in a Si substrate as a semiconductor substrate;
oxidizing at least a needle-shaped semiconductor substrate material on a bottom inner surface of the recess to form a needle-shaped Si oxide on the bottom inner surface of the recess; and
providing at least the needle-shaped Si oxide on the bottom inner surface of the recess with a liquid that is capable of dissolving a Si oxide, thereby dissolving the needle-shaped Si oxide.

### Claim 2 (depends on 1)

The method of manufacturing a structure according to claim 1, wherein the formation of the recess in the semiconductor substrate is performed by etching with use of a catalyst that comprises a noble metal.

### Claim 3 (depends on 2)

The method of manufacturing a structure according to claim 2, wherein the etching with use of the catalyst that comprises the noble metal is metal-assisted chemical etching.

### Claim 4 (depends on 1)

The method of manufacturing a structure according to claim 1, wherein the oxidation is thermal oxidation, anodic oxidation, or photo-oxidation.

### Claim 5 (depends on 1)

The method of manufacturing a structure according to claim 1, wherein the liquid that is capable of dissolving the Si oxide comprises hydrogen fluoride.

### Claim 6 (depends on 1)

The method of manufacturing a structure according to claim 1, wherein the needle-shaped semiconductor substrate material remains on the bottom inner surface of the recess after the formation of the recess.

### Claim 7 (depends on 6)

The method of manufacturing a structure according to claim 6, wherein the formation of the recess in the semiconductor substrate is performed by etching with use of a catalyst that comprises a noble metal.