Substrate treating apparatus

A substrate treating apparatus comprising:

• a cooling unit positioned at a first position and including a cooling plate cooling a substrate;
• a heating unit positioned at a second position and including a heating plate heating the substrate and lift pins provided to be elevated or lowered from the heating plate;
• a transfer unit including a chill plate supporting the substrate so as to transfer the substrate, an arm connected to the chill plate and moving between the first position and the second position, and a rail part provided to allow the arm to move;
• and
• a housing part having an accommodation space in which the cooling unit, the heating unit, and the transfer unit are accommodated and provided with an entrance through which the substrate goes in and out,
• wherein the transfer unit further includes:
• a first support part installed on the chill plate and including a first tip having a first height;
• and
• a second support part including a bimetal installed on the chill plate and having flatness or a bending direction changed according to a temperature and a second tip provided on the bimetal,
• at a first temperature, a maximum height of the second tip becomes equal to or lower than a height of the first tip, such that the substrate is supported by the first tip of the first support part, and
• at a second temperature lower than the first temperature, the second tip becomes higher than the first tip, such that the substrate is supported by the second tip of the second support part.

A substrate treating apparatus comprising:

• a chill plate having an accommodation groove formed to be concave downwardly, having a guide hole extending inward from an edge of the chill plate so that the chill plate does not interfere with lift pins penetrating through a heating plate and having a slit shape, having a cooling flow passage through which a cooling fluid passes, and having a first area constituting a central portion and a second area including an edge outside the first area;
• a plurality of first support parts installed on the chill plate, provided radially to be adjacent to the edge in the second area as compared with the first area, further provided radially to be spaced apart from each other at equal intervals in the first area, and including first tips having a height between 20 to 60 μm from the chill plate;
• and
• second support parts including bimetals installed on the chill plate and having flatness or a bending direction changed according to a temperature and second tips provided on the bimetals, and adjacent to the plurality of first support parts and provided in at least the same number as the number of the plurality of first support parts,
• wherein at a first temperature, a maximum height of the second tips becomes equal to or lower than a height of the first tips, such that the substrate is supported by the first tips of the plurality of first support parts, and
• at a second temperature lower than the first temperature, the second tips become higher than the first tips, such that a height of the second tips from the chill plate is 100 μm to 500 μm and the substrate is supported by the second tips of the second support parts.