Semiconductor device and manufacturing method thereof
AssigneeHon Young Semiconductor Corporation
InventorYan-Ru Chen
Life of this patent
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Abstract
Some embodiments of the present disclosure provide a method of forming a semiconductor device including forming a dielectric layer stack on an epitaxial layer. The dielectric layer stack includes at least one first layer and at least one second layer, the at least one first layer is made of a first material, the at least second layer is made of a second material different from the first material. The dielectric layer stack is patterned to form a staircase-shaped dielectric layer stack. An ion implantation process is performed to the epitaxial layer by using the staircase-shaped dielectric layer stack.
Claims14
A method of manufacturing a semiconductor device, comprising:
- forming a dielectric layer stack on an epitaxial layer, wherein the dielectric layer stack includes at least one first layer and at least one second layer, the at least one first layer is made of a first material, the at least one second layer is made of a second material different from the first material;
- patterning the dielectric layer stack to form a staircase-shaped dielectric layer stack, wherein patterning the dielectric layer stack comprises:
- performing a first patterning process to pattern the dielectric layer stack by using a photomask, wherein the dielectric layer stack has a first sidewall;
- and
- moving the photomask along a first direction and performing a second patterning process to partially pattern the dielectric layer stack, so that the dielectric layer stack has the first sidewall and a second sidewall shifted along the first direction, the second sidewall is above the first sidewall;
- and
- performing an ion implantation process to the epitaxial layer by using the staircase-shaped dielectric layer stack.
A method of manufacturing a semiconductor device, comprising:
- forming a dielectric layer stack on an epitaxial layer, wherein the dielectric layer stack includes first layers and second layers, the first layers are made of a first material, the second layers are made of a second material different from the first material;
- patterning the dielectric layer stack to form a staircase-shaped dielectric layer stack, wherein patterning the dielectric layer stack comprises:
- performing a first patterning process to pattern the dielectric layer stack by using a photomask, wherein the dielectric layer stack has a first sidewall;
- and
- moving the photomask along a first direction and performing a second patterning process to partially pattern the dielectric layer stack, so that the dielectric layer stack has the first sidewall and a second sidewall shifted along the first direction, the second sidewall is above the first sidewall;
- and
- performing an ion implantation process to the epitaxial layer by using the staircase-shaped dielectric layer stack to form a first well region in the epitaxial layer, wherein a boundary of the first well region is staircase-shaped.
Dependencies are inferred from the claim text.