Selective deposition processes on semiconductor substrates

A method of selectively depositing polysilicon, the method comprising:

• depositing a first silicon (Si) layer by physical vapor deposition (PVD) on a semiconductor substrate surface with at least one feature formed thereon, the at least one feature having at least one opening at a top surface with an opening width, at least one sidewall, and a bottom, the at least one feature extending a feature depth from the top surface to the bottom, the first silicon (Si) layer forming on the top surface, along the at least one sidewall, and the bottom;
• forming a flowable polymer film on the first silicon (Si) layer within the at least one feature, the flowable polymer film forming on the first silicon (Si) layer on the bottom and having a polymer depth less than or equal to the feature depth;
• selectively removing at least a portion of the first silicon (Si) layer from the top surface and the at least one sidewall without substantially affecting any material beneath the flowable polymer film;
• removing the flowable polymer film to expose the first silicon (Si) layer on the bottom;
• and
• oxidizing the remaining portion of the first silicon (Si) layer to form a first silicon oxide (SiOx) layer on the bottom.