Light-emitting substrate and manufacturing method thereof, and light-emitting apparatus

A manufacturing method of a light-emitting substrate, comprising:

• forming a plurality of light-emitting devices on a substrate, the plurality of light-emitting devices including at least one first light-emitting device and at least one second light-emitting device;
• wherein
• a first light-emitting device in the at least one first light-emitting device includes a first color light-emitting layer with a first thickness;
• and a second light-emitting device in the at least one second light-emitting device includes a first color light-emitting layer with a second thickness, and a first material layer and a second color light-emitting layer that are sequentially stacked on the first color light-emitting layer included in the second light-emitting device in a direction away from the substrate;
• wherein the second thickness is less than the first thickness;
• in the second light-emitting device, the first material layer is configured to transport holes transported from the first color light-emitting layer to the second color light-emitting layer, and to block electrons transported from the second color light-emitting layer;
• or the first material layer is configured to transport electrons transported from the first color light-emitting layer to the second color light-emitting layer, and to block holes transported from the second color light-emitting layer;
• and
• the first material layer is disposed only in a region where the second light-emitting device is located;
• wherein forming the plurality of light-emitting devices on the substrate includes:
• forming the second color light-emitting layer;
• wherein forming the second color light-emitting layer includes:
• forming a third film on the substrate on which the first material layer is formed, the third film including a second quantum dot light-emitting material;
• performing electromagnetic radiation on a portion of the third film located in a region where the second light-emitting device is located, so as to change a solubility of the portion of the third film located in the region where the second light-emitting device is located;
• and
• dissolving a portion of the third film located outside the region where the second light-emitting device is located, so that the third film forms a second portion with a thickness of less than 5 nm in the region outside the region where the second light-emitting device is located, so as to obtain the second color light-emitting layer with a third thickness included in the second light-emitting device and the second color light-emitting layer with a fourth thickness included in the first light-emitting device;
• wherein the fourth thickness is less than the third thickness, and is less than the second thickness.