# US 12,593,552 B2 · Semiconductor light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,593,552 B2 - Document ID: US12593552B2 - Status: Granted - Kind: B2 - Application number: 18/062,321 - Filed: 2022-12-06 - Published: 2023-06-15 - Granted: 2026-03-31 - Earliest claimed: 2021-12-09 - Assignees: Rohm Co., Ltd. - Applicants: ROHM Co., LTD. - Inventors: Dai Miyazaki - Web page: https://patentgrep.com/patent/US12593552B2 ## CPC - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/00: Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED] - H10H 20/8506: {Containers} - H10W 90/00: Package configurations - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Disclosed herein is a semiconductor light emitting device including a semiconductor light emitting element and a conductive support component that supports the semiconductor light emitting element and that includes an electrically-conductive part and an insulating part. The electrically-conductive part includes a first electrically-conductive part and a second electrically-conductive part. The insulating part has an insulating main surface and an insulating back surface. The first electrically-conductive part includes a first main surface part exposed from the insulating main surface. The second electrically-conductive part includes a second back surface part exposed from the insulating back surface. The first main surface part includes a first main surface base part on which the semiconductor light emitting element is mounted and a first main surface extending part extending from the first main surface base part. The first main surface extending part overlaps with the second back surface part as viewed in the thickness direction. ## Claims ### Claim 1 A semiconductor light emitting device comprising: a semiconductor light emitting element; and a conductive support component that supports the semiconductor light emitting element, wherein the conductive support component includes an electrically-conductive part and an insulating part, the electrically-conductive part includes a first electrically-conductive part and a second electrically-conductive part, the first electrically-conductive part is insulated from the second electrically-conductive part with interposition of the insulating part, the insulating part has an insulating main surface oriented toward a first side and an insulating back surface oriented toward a second side, the second side is opposite to the first side in a thickness direction, the first electrically-conductive part includes a first main surface part exposed from the insulating main surface, the second electrically-conductive part includes a second back surface part exposed from the insulating back surface, the first main surface part includes a first main surface base part on which the semiconductor light emitting element is mounted and a first main surface extending part extending from the first main surface base part in a first direction orthogonal to the thickness direction, and the first main surface extending part overlaps with the second back surface part as viewed in the thickness direction. ### Claim 2 (depends on 1) The semiconductor light emitting device according to claim 1, wherein the first electrically-conductive part further includes a first back surface part exposed from the insulating back surface. ### Claim 3 (depends on 2) The semiconductor light emitting device according to claim 2, wherein the first electrically-conductive part further includes a first coupling part located between the first main surface part and the first back surface part in the thickness direction. ### Claim 4 (depends on 3) The semiconductor light emitting device according to claim 3, wherein the second electrically-conductive part further includes a second main surface part exposed from the insulating main surface. ### Claim 5 (depends on 4) The semiconductor light emitting device according to claim 4, wherein the second electrically-conductive part further includes a second coupling part located between the second main surface part and the second back surface part in the thickness direction. ### Claim 6 (depends on 5) The semiconductor light emitting device according to claim 5, wherein the first main surface extending part has a smaller size in a second direction orthogonal to the thickness direction and the first direction than the first main surface base part. ### Claim 7 (depends on 6) The semiconductor light emitting device according to claim 6, wherein the second main surface part further includes a second main surface base part and a second main surface extending part, and the second main surface extending part extends from the second main surface base part toward the first electrically-conductive part in the first direction. ### Claim 8 (depends on 7) The semiconductor light emitting device according to claim 7, wherein the first main surface extending part and the second main surface extending part overlap as viewed in the second direction. ### Claim 9 (depends on 8) The semiconductor light emitting device according to claim 8, wherein the first main surface extending part leads to the first main surface base part with a bias toward a third side in the second direction. ### Claim 10 (depends on 9) The semiconductor light emitting device according to claim 9, wherein the second main surface extending part leads to the second main surface base part with a bias toward a fourth side in the second direction. ### Claim 11 (depends on 8) The semiconductor light emitting device according to claim 8, further comprising: a Zener diode mounted on the first main surface base part; a first wire; a second wire; and a third wire, wherein the semiconductor light emitting element has a first electrode and a second electrode, the first wire is connected to the Zener diode, the second wire is connected to the first electrode and the second electrically-conductive part, and the third wire is connected to the second electrode and the first electrically-conductive part. ### Claim 12 (depends on 11) The semiconductor light emitting device according to claim 11, wherein the second wire is connected to the second main surface extending part. ### Claim 13 (depends on 12) The semiconductor light emitting device according to claim 12, wherein the third wire is connected to the first main surface extending part. ### Claim 14 (depends on 13) The semiconductor light emitting device according to claim 13, wherein the first wire is connected to the first electrode. ### Claim 15 (depends on 14) The semiconductor light emitting device according to claim 14, wherein the first wire is connected to the second wire on the first electrode. ### Claim 16 (depends on 14) The semiconductor light emitting device according to claim 14, wherein the Zener diode is disposed on a side opposite to the second electrically-conductive part across the semiconductor light emitting element. ### Claim 17 (depends on 1) The semiconductor light emitting device according to claim 1, further comprising: a case having a part that surrounds the semiconductor light emitting element as viewed in the thickness direction.