# US 12,593,541 B2 · Light-emitting element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,593,541 B2 - Document ID: US12593541B2 - Status: Granted - Kind: B2 - Application number: 18/344,443 - Filed: 2023-06-29 - Published: 2024-01-04 - Granted: 2026-03-31 - Earliest claimed: 2022-06-30 - Assignees: Nichia Corporation - Applicants: Nichia Corporation - Inventors: Eiji Muramoto; Kosuke Yoshioka - Web page: https://patentgrep.com/patent/US12593541B2 ## CPC - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H 20/825: containing nitrogen, e.g. GaN - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A shortest distance between a first p-side electrode and a second p-side connection portion is greater than a shortest distance between the first p-side electrode and a closest one of first n-side connection portions most proximate to the first p-side electrode among a plurality of first n-side connection portions in the plan view. The second p-side electrode is located at least in a region between the first p-side electrode and the closest one of the first n-side connection portions in the plan view. ## Claims ### Claim 1 A light-emitting element having a quadrilateral shape in a plan view, comprising: a semiconductor structure body including an n-side layer, a p-side layer, and an active layer positioned between the n-side layer and the p-side layer, the n-side layer including a plurality of first regions exposed from the active layer and the p-side layer in the plan view; a first p-side electrode located outside the semiconductor structure body in the plan view; a second p-side electrode located on a side of a surface of the p-side layer opposite to a surface on which the active layer is located; a p-side wiring layer including a first p-side connection portion connected with the first p-side electrode, and at least one second p-side connection portion connected with the second p-side electrode, the at least one second p-side connection portion overlapping an intersection point of diagonals of the quadrilateral shape of the light-emitting element in the plan view; and an n-side wiring layer including a plurality of first n-side connection portions connected to the plurality of first regions of the n-side layer, wherein in the plan view, a shortest distance between the first p-side electrode and the at least one second p-side connection portion is greater than a shortest distance between the first p-side electrode and a closest one of the plurality of first n-side connection portions that is most proximate to the first p-side electrode among the plurality of first n-side connection portions, in the plan view, the second p-side electrode is located at least in a region between the first p-side electrode and the closest one of the plurality of first n-side connection portions. ### Claim 2 (depends on 1) The light-emitting element according to claim 1, wherein the at least one second p-side connection portion is one of a plurality of second p-side connection portions, and the plurality of second p-side connection portions are spaced apart from each other in the plan view. ### Claim 3 (depends on 2) The light-emitting element according to claim 2, wherein at least one of the plurality of second p-side connection portions is located between adjacent ones of the plurality of first n-side connection portions in the plan view. ### Claim 4 (depends on 2) The light-emitting element according to claim 2, wherein the plurality of second p-side connection portions include at least one second p-side connection portion to which a shortest distance from the first p-side electrode is a third distance, at least one second p-side connection portion to which a shortest distance from the first p-side electrode is a fourth distance greater than the third distance, the third distance is the shortest among shortest distances between the first p-side electrode and respective ones of the second p-side connection portions, and in the plan view, an area of the at least one second p-side connection portion to which the shortest distance from the first p-side electrode is the third distance is less than an area of the at least one second p-side connection portion to which the shortest distance from the first p-side electrode is the fourth distance. ### Claim 5 (depends on 1) The light-emitting element according to claim 1, wherein the shortest distance between the first p-side electrode and the at least one second p-side connection portion in the plan view is not less than 100 μm and not more than 500 μm. ### Claim 6 (depends on 1) The light-emitting element according to claim 1, wherein the semiconductor structure body has a generally quadrilateral shape in the plan view, and the at least one second p-side connection portion is positioned in at least a region including a center of the semiconductor structure body in the plan view, the center of the semiconductor structure body being an intersection point of diagonals of the generally quadrilateral shape of the semiconductor structure body in the plan view. ### Claim 7 (depends on 1) The light-emitting element according to claim 1, wherein an area of the at least one second p-side connection portion in the plan view is not less than 10% and not more than 90% of an area of the p-side layer in the plan view. ### Claim 8 A light-emitting element comprising: a semiconductor structure body including an n-side layer, a p-side layer, and an active layer positioned between the n-side layer and the p-side layer, the n-side layer including a plurality of first regions exposed from the active layer and the p-side layer in a plan view; a first p-side electrode located outside the semiconductor structure body in the plan view; a first n-side electrode located outside the semiconductor structure body in the plan view; a second p-side electrode located on a side of a surface of the p-side layer opposite to a surface of the p-side layer on which the active layer is located; a p-side wiring layer including a first p-side connection portion connected with the first p-side electrode, and at least one second p-side connection portion connected with the second p-side electrode; and an n-side wiring layer including a plurality of first n-side connection portions connected to the plurality of first regions of the n-side layer, wherein the p-side wiring layer includes a plurality of first openings that overlap the plurality of first regions in the plan view, the plurality of first openings having mutually-different areas are arranged on a first axis connecting the first p-side electrode and the first n-side electrode with a shortest distance in the plan view, an area of one of the plurality of first openings positioned at a first distance from the first p-side electrode is greater than an area of one of the plurality of first openings positioned at a second distance from the first p-side electrode in the plan view, the second distance is greater than the first distance, each of the first distance and the second distance is a shortest distance between the first p-side electrode and a respective one of the first openings, the first distance is the shortest among shortest distances between the first p-side electrode and the plurality of first openings, respectively. ### Claim 9 (depends on 8) The light-emitting element according to claim 8, wherein the at least one second p-side connection portion is positioned in at least a region including a center of the semiconductor structure body in the plan view. ### Claim 10 (depends on 8) The light-emitting element according to claim 8, wherein an area of the at least one second p-side connection portion in the plan view is not less than 10% and not more than 90% of an area of the p-side layer in the plan view. ### Claim 11 (depends on 8) The light-emitting element according to claim 8, wherein the first n-side electrode is connected with the n-side wiring layer, an area of one of the plurality of first openings that is more proximate to the first p-side electrode than to the first n-side electrode is greater than an area of one of the plurality of first openings that is more proximate to the first n-side electrode than to the first p-side electrode in the plan view. ### Claim 12 A light-emitting element comprising: a semiconductor structure body including an n-side layer, a p-side layer, and an active layer positioned between the n-side layer and the p-side layer, the n-side layer including a plurality of first regions exposed from the active layer and the p-side layer in a plan view; a first p-side electrode located outside the semiconductor structure body in the plan view; a second p-side electrode located on a side of a surface of the p-side layer opposite to a surface on which the active layer is located; a p-side wiring layer including a first p-side connection portion connected with the first p-side electrode, and at least one second p-side connection portion connected with the second p-side electrode; and an n-side wiring layer including a plurality of first n-side connection portions connected to the plurality of first regions of the n-side layer, wherein in the plan view, a shortest distance between the first p-side electrode and the at least one second p-side connection portion is greater than a shortest distance between the first p-side electrode and a closest one of the plurality of first n-side connection portions that is most proximate to the first p-side electrode among the plurality of first n-side connection portions, in the plan view, the second p-side electrode is located at least in a region between the first p-side electrode and the closest one of the plurality of first n-side connection portions, the at least one second p-side connection portion is one of a plurality of second p-side connection portions, and the plurality of second p-side connection portions are spaced apart from each other in the plan view, the plurality of second p-side connection portions include at least one second p-side connection portion to which a shortest distance from the first p-side electrode is a third distance, and at least one second p-side connection portion to which a shortest distance from the first p-side electrode is a fourth distance greater than the third distance, the third distance is the shortest among shortest distances between the first p-side electrode and respective ones of the second p-side connection portions, and in the plan view, an area of the at least one second p-side connection portion to which the shortest distance from the first p-side electrode is the third distance is less than an area of the at least one second p-side connection portion to which the shortest distance from the first p-side electrode is the fourth distance.