Semiconductor structure and method of manufacture
AssigneePoro Technologies Ltd
InventorsMuhammad Ali, Rachel Oliver, Tongtong Zhu
Life of this patent
Estimating the term…
Abstract
A semiconductor structure comprises a layer of a first III-nitride material having a first lattice dimension; a non-porous layer of a second III-nitride material having a second lattice dimension different from the first lattice dimension; and a porous region of III-nitride material disposed between the layer of first III-nitride material and the non-porous layer of the second III-nitride material. An optoelectronic semiconductor device, an LED, and a method of manufacturing a semiconductor structure are also provided.
Claims18
A semiconductor structure comprising:
- a layer of a first III-nitride material having a first lattice dimension;
- a non-porous layer of a second III-nitride material having a second lattice dimension different from the first lattice dimension;
- and
- a porous region of a third III-nitride material disposed between the layer of first III-nitride material and the non-porous layer of the second III-nitride material;
- in which the second III-nitride material is InxGa1-xN and 0.1<x<0.8, and
- in which the third III-nitride material of the porous region is InyGa1-yN, in which 0≤y≤x.
A method of manufacturing a semiconductor structure, comprising the steps of:
- electrochemically porosifying a region of III-nitride material formed on a layer of a first III-nitride material having a first lattice dimension, to form a porous region of III-nitride material;
- and
- depositing, over the porous region of III-nitride material, a non-porous layer of a second III-nitride material having a second lattice dimension different from the first lattice dimension, so that the porous region is disposed between the layer of the first III-nitride material and the non-porous layer of the second III-nitride material;
- in which the second III-nitride material is InxGa1-xN and 0.1<x<0.8, and
- in which the porous region is formed from a third III-nitride material which is InxGa1-yN, in which 0≤y≤x.
Dependencies are inferred from the claim text.