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US 12,593,527 B2Granted
Binary colloidal quantum dot technology
AssigneeNew Jersey Institute of Technology
InventorsDong Kyun Ko, Shihab Bin Hafiz, Mohammad Mostafa Al Mahfuz
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Abstract
A binary CQD device is disclosed, which could include a MWIR-absorbing intraband CQD with another type of CQD. The binary CQD device could include a MWIR-absorbing intraband silver selenide (Ag2Se) CQD with a lead sulfide (PbS) CQD.
Claims21
A binary colloidal quantum dot device comprising:
- a binary colloidal quantum dot layer on a substrate, the binary colloidal quantum dot layer comprising a plurality of a first mid-wavelength infrared absorbing intraband colloidal quantum dot embedded in a plurality of a second colloidal quantum dot, wherein there is from 1 to 18 of the first mid-wavelength infrared absorbing intraband colloidal quantum dot per 100 of the second colloidal quantum dot.
A binary colloidal quantum dot device comprising:
- a binary colloidal quantum dot layer on a substrate, the binary colloidal quantum dot layer comprising a plurality of a mid-wavelength infrared absorbing intraband silver selenide (Ag2Se) colloidal quantum dot embedded in a plurality of
- a lead sulfide (PbS) colloidal quantum dot, wherein there is from 1 to 18 of the mid-wavelength infrared absorbing intraband silver selenide (Ag2Se) colloidal quantum dot per 100 of the lead sulfide (PbS) colloidal quantum dot.
Dependencies are inferred from the claim text.