Image sensor device with light blocking structure and adhesion layer embedded in oxide layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZen-Fong Huang, Fu-Cheng Chang
Life of this patent
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Abstract
An image sensor device includes a substrate, a deep-trench isolation structure, an oxide layer, a light blocking structure, and an adhesion layer. The substrate has a photosensitive region. The deep-trench isolation structure is in the substrate and adjacent the photosensitive region. The oxide layer is over the photosensitive region and the deep-trench isolation structure. The light blocking structure is over the oxide layer. A bottom portion of the light blocking structure is embedded in the oxide layer. The adhesion layer is between the light blocking structure and the oxide layer. The adhesion layer extends beyond a sidewall of a top portion of the light blocking structure.
Claims20
An image sensor device comprising:
- a substrate having a photosensitive region;
- a deep-trench isolation structure in the substrate and adjacent the photosensitive region;
- an oxide layer over the photosensitive region and the deep-trench isolation structure;
- a light blocking structure over the oxide layer, wherein a bottom portion of the light blocking structure is embedded in the oxide layer;
- and
- an adhesion layer between the light blocking structure and the oxide layer, wherein the adhesion layer extends beyond a sidewall of a top portion of the light blocking structure, a bottommost surface of the adhesion layer is higher than a topmost surface of the photosensitive region, and the adhesion layer is in direct contact with the oxide layer and the deep-trench isolation structure.
An image sensor device comprising:
- a substrate having a photosensitive region;
- a deep-trench isolation structure in the substrate and adjacent the photosensitive region;
- an oxide layer above the substrate;
- a light blocking structure above the oxide layer;
- and
- an adhesion layer between the light blocking structure and the oxide layer, wherein a first portion of the adhesion layer is directly above the photosensitive region and not covered by the light blocking structure, a second portion of the adhesion layer is embedded in the oxide layer, a bottommost surface of the second portion of the adhesion layer is higher than a topmost surface of the photosensitive region, a thickness of the oxide layer is greater than a thickness of the adhesion layer, and the adhesion layer is in direct contact with the oxide layer and the deep-trench isolation structure.
An image sensor device comprising:
- a substrate having a first surface and a second surface opposite to the first surface, wherein the substrate further has a photosensitive region closer to the first surface than to the second surface;
- a deep-trench isolation structure in the substrate and adjacent the photosensitive region;
- a first light blocking structure and a second light blocking structure over the substrate and on opposite sides of the photosensitive region, wherein a bottommost surface of the first light blocking structure is lower than the second surface of the substrate;
- an adhesion layer below the first light blocking structure and the second light blocking structure, wherein the adhesion layer comprises:
- a first portion in contact with the bottommost surface of the first light blocking structure;
- a second portion in contact with a bottommost surface of the second light blocking structure, wherein the first and second portions of the adhesion layer are higher than a topmost surface of the photosensitive region;
- and
- a third portion interconnecting the first portion and the second portion of the adhesion layer;
- a high-k dielectric layer between the adhesion layer and the substrate and comprising:
- an upper portion directly between the third portion of the adhesion layer and the photosensitive region;
- and
- a lower portion below the bottommost surface of the first light blocking structure and in direct contact with the substrate;
- and
- an oxide layer over the photosensitive region, the high-k dielectric layer, and the deep-trench isolation structure, wherein the adhesion layer is in direct contact with the oxide layer and the deep-trench isolation structure.
Dependencies are inferred from the claim text.