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US 12,593,517 B2Granted
Solid-state imaging device, drive method thereof and electronic apparatus
AssigneeSony Group Corporation
InventorsTaiichiro Watanabe, Akihiro Yamada, Hideo Kido, Hiromasa Saito, Keiji Mabuchi, Yuko Ohgishi
Life of this patent
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Abstract
A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; a plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.
Claims20
A light detecting device, comprising:
- a semiconductor region, comprising:
- a first photoelectric conversion region;
- a second photoelectric conversion region;
- and
- a first floating diffusion region disposed between the first photoelectric conversion region and the second photoelectric conversion region;
- a pixel isolation region surrounding the semiconductor region;
- a first gate electrode and a second gate electrode configured to transfer a charge in the first photoelectric conversion region to the first floating diffusion region;
- and
- a third gate electrode and a fourth gate electrode configured to transfer a charge in the second photoelectric conversion region to the first floating diffusion region,
- wherein each of the first to fourth gate electrodes is disposed adjacent to the pixel isolation region.
7 more elements
An electronic apparatus, comprising:
- an optical lens system;
- a light detecting device, comprising:
- a semiconductor region, comprising:
- a first photoelectric conversion region;
- a second photoelectric conversion region;
- and
- a first floating diffusion region disposed between the first photoelectric conversion region and the second photoelectric conversion region;
- a pixel isolation region surrounding the semiconductor region;
- a first gate electrode and a second gate electrode configured to transfer a charge in the first photoelectric conversion region to the first floating diffusion region;
- and
- a third gate electrode and a fourth gate electrode configured to transfer a charge in the second photoelectric conversion region to the first floating diffusion region,
- wherein each of the first to fourth gate electrodes is disposed adjacent to the pixel isolation region;
- and
- a signal processing device which processes output signals from the light detecting device.
11 more elements
Dependencies are inferred from the claim text.