Radio frequency interference mitigation for silicon-on-insulator devices

A semiconductor die comprising:

• a silicon substrate, a polysilicon layer, and a plurality of metal layers above the polysilicon layer;
• a first active device and a second active device;
• and
• a polysilicon ground web formed within the polysilicon layer and connected from the polysilicon layer to a circuit ground via a path formed from the polysilicon layer through silicon substrate, the polysilicon ground web extending around at least a portion of a periphery of the first active device, at least a portion of a periphery of the second active device, and between the first active device and the second active device.

A mobile device comprising:

• a radio frequency module including a semiconductor die including a silicon substrate, a polysilicon layer, and a plurality of metal layers above the polysilicon layer;
• a first active device formed in the semiconductor die and a second active device formed in the semiconductor die;
• and a polysilicon ground web formed within the polysilicon layer and connected from the polysilicon layer to a circuit ground via a path formed from the polysilicon layer through silicon substrate, the polysilicon ground web extending around at least a portion of a periphery of the first active device, at least a portion of a periphery of the second active device, and between the first active device and the second active device;
• and
• an antenna coupled to the radio frequency module.