Transistors with varying width nanosheet

A fin field-effect transistor circuit, comprising:

• a semiconductor substrate;
• at least one source region above the semiconductor substrate;
• at least one drain region above the semiconductor substrate;
• at least one gate above the semiconductor substrate, the at least one gate including first and second gates;
• and
• a nanosheet between the semiconductor substrate and the at least one gate,
• wherein the nanosheet comprises
• a first region with first and second widths, a width of the first region increased, under a midpoint of the first gate, from the second width to the first width, and
• a second region with the second width under the second gate, the first width being different than the second width.

A semiconductor device, comprising:

• a substrate;
• one or more source regions above the substrate;
• one or more drain regions above the substrate;
• first and second gates above the substrate, the first and second gates extending along a vertical direction in a plan view, the first gate comprising a metal layer having first and second edges extending along the vertical direction in the plan view;
• and
• a nanosheet between the substrate and the first and second gates, wherein:
• the nanosheet comprises
• a first region under the metal layer of the first gate, extending along the first and second edges in the plan view, and having a first width;
• a second region under the metal layer of the first gate, extending along only the first edge in the plan view, and having a second width, the first region being contiguous with the second region;
• and
• a third region having two different widths under the second gate.