Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate having a front surface, a transistor portion and a diode portion;
• and
• an emitter electrode and a gate electrode provided above the front surface of the semiconductor substrate, wherein
• the transistor portion has:
• a plurality of trench portions electrically connected to the gate electrode;
• a drift region of a first conductivity type provided in the semiconductor substrate;
• a base region of a second conductivity type provided above the drift region;
• an emitter region of the first conductivity type having an upper surface coincident with the front surface of the semiconductor substrate;
• and
• a trench bottom barrier region of a second conductivity type provided between the drift region and the base region and having a higher doping concentration than that of the base region, and
• the trench bottom barrier region is electrically connected to the emitter electrode, wherein
• the transistor portion further has:
• a well region of a second conductivity type provided on the front surface of the semiconductor substrate and extending along an outer circumference of an active region, wherein the emitter region is not provided on the well region;
• and
• an interlayer dielectric film provided above the semiconductor substrate, the trench bottom barrier region is connected to the well region, and the well region is electrically connected to the emitter electrode.

A semiconductor device comprising:

• a semiconductor substrate having a front surface, a transistor portion and a diode portion;
• and
• an emitter electrode and a gate electrode provided above the front surface of the semiconductor substrate, wherein
• the transistor portion has:
• a plurality of trench portions electrically connected to the gate electrode;
• a drift region of a first conductivity type provided in the semiconductor substrate;
• a base region of a second conductivity type provided above the drift region;
• an emitter region of the first conductivity type having an upper surface coincident with the front surface of the semiconductor substrate;
• and
• a trench bottom barrier region of a second conductivity type provided between the drift region and the base region and having a higher doping concentration than that of the base region, and
• the trench bottom barrier region is electrically connected to the emitter electrode, wherein
• the transistor portion further has:
• a well region of a second conductivity type provided on the front surface of the semiconductor substrate and extending along an outer circumference of an active region, wherein the emitter region is not provided on the well region;
• and
• an interlayer dielectric film provided above the semiconductor substrate,
• the trench bottom barrier region is connected to the well region,
• the well region is electrically connected to the emitter electrode, and
• the trench bottom barrier region is provided in a region adjacent to the diode portion, in a top view of the semiconductor substrate.