Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Yi Lee, Hong-Hsien Ke, Chung-Ting Ko, Chia-Hui Lin, Jr-Hung Li
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Abstract
An etch stop layer is formed over a semiconductor fin and gate stack. The etch stop layer is formed utilizing a series of pulses of precursor materials. A first pulse introduces a first precursor material to the semiconductor fin and gate stack. A second pulse introduces a second precursor material, which is turned into a plasma and then directed towards the semiconductor fin and gate stack in an anisotropic deposition process. As such, a thickness of the etch stop layer along a bottom surface is larger than a thickness of the etch stop layer along sidewalls.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming spacers adjacent to a gate stack over a semiconductor fin;
- pulsing diiodosilane a first time over the gate stack;
- generating a first plasma from nitrogen;
- after the pulsing the diiodosilane, pulsing the first plasma a first time over the gate stack;
- pulsing diiodosilane a second time;
- and
- pulsing the first plasma a second time over the gate, stack with a different RF power than the pulsing the first plasma the first time, wherein after the pulsing the first plasma the second time, a layer of silicon nitride is present, the layer of silicon nitride having a first thickness adjacent to the spacers and a second thickness greater than the first thickness over the gate stack, wherein a plasma bias causes a growth rate boost to a portion of the layer of silicon nitride.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first gate stack and a second gate stack over a semiconductor fin;
- forming a first spacer adjacent to the first gate stack and a second spacer adjacent to the second gate stack;
- pulsing diiodosilane over the first gate stack and the second gate stack to form a first surface;
- biasing a first plasma of nitrogen towards the first gate stack and the second gate stack a first time with a first RF power to react with the first surface and form a second surface;
- repeating the pulsing and the biasing a second time to form a first material, the biasing the second time using a different RF power from the first time;
- and
- forming a second spacer from the first material.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a layer of silicon nitride using an atomic layer deposition process, the atomic layer deposition process comprising:
- a plurality of non-plasma deposition steps using diiodosilane as a first precursor;
- and
- a plurality of plasma deposition steps using nitrogen as a second precursor, wherein at least two of the plurality of plasma deposition steps are performed with different RF powers, the plurality of plasma deposition steps being performed alternatingly with the plurality of non-plasma deposition steps.
Dependencies are inferred from the claim text.