Semiconductor structure and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorsChing-Ling Lin, Wen-An Liang, Chia-Fu Hsu, Huang-Ren Wei
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Abstract
The invention provides a semiconductor structure, the semiconductor structure comprises a substrate, a dielectric layer located on the substrate, a plurality of gate structures located in the dielectric layer on the substrate, a plurality of first metal layers located on a part of the gate structures, and the first metal layers are respectively electrically connected with the corresponding gate structures, at least one second metal layer, the second metal layer is bridged over at least two of the gate structures, wherein the depth of the first metal layer is greater than that of the second metal layer.
Claims8
A semiconductor structure comprising:
- a substrate;
- a dielectric layer located on the substrate;
- a plurality of gate structures located in the dielectric layer on the substrate;
- a plurality of first metal layers located on a part of the gate structures, and the first metal layers are respectively electrically connected with the corresponding gate structures;
- and
- at least one second metal layer bridging at least two of the gate structures, wherein a depth of the first metal layer is greater than a depth of the second metal layer, wherein the second metal layer has a strip shape, and the ratio of a length to a width of the second metal layer is greater than 25.
Dependencies are inferred from the claim text.