Electronic device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJer-Fu Wang, Chao-Ching Cheng, Hung-Li Chiang, Iuliana Radu
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Abstract
An electronic device and a method for manufacturing the same are provided. The electronic device includes a substrate and a gate structure. The substrate includes a fin. The fin includes a source region and a drain region spaced apart from the source region. The gate structure is located between the source region and the drain region. The gate structure includes a work function layer. The work function layer includes a compound of a metal material and a Group VIA material.
Claims20
An electronic device, comprising:
- a substrate including a fin, wherein the fin includes a source region and a drain region spaced apart from the source region;
- and
- a gate structure located between the source region and the drain region, and including a work function layer, wherein the work function layer includes a compound of a metal material and a Group VIA material, and is a multilayer structure.
An electronic device, comprising:
- a substrate;
- a plurality of semiconductor nano-sheet channels located over the substrate and longitudinally spaced apart from each other;
- a gate dielectric layer surrounding the plurality of semiconductor nano-sheet channels;
- a first gate layer surrounding the gate dielectric layer, wherein the first gate layer includes a compound of a first metal material and a Group VIA material;
- and
- a second gate layer surrounding the first gate layer, wherein the second gate layer includes a compound of a second metal material and the Group VIA material.
An electronic device, comprising:
- a substrate;
- a plurality of semiconductor nanostructures located over the substrate and longitudinally spaced apart from each other;
- a gate dielectric layer surrounding the plurality of semiconductor nanostructures;
- a first gate layer surrounding the gate dielectric layer, wherein the first gate layer includes a first compound of a first metal material and a Group VIA material;
- and
- a second gate layer surrounding the first gate layer, wherein the second gate layer includes a second compound of a second metal material and the Group VIA material,
- wherein the first compound is different from the second compound.
Dependencies are inferred from the claim text.