Semiconductor device and method of manufacturing semiconductor device

A semiconductor device, which is a reverse conducting insulated gate bipolar transistor (RC-IGBT) in which an IGBT region and a diode region, which are an active region, and a termination region surrounding the active region in plan view are provided on a single semiconductor substrate, wherein

• a drift layer of a first conductivity type is provided on an upper surface of the semiconductor substrate,
• the IGBT region includes a base layer of a second conductivity type in a surface layer of the drift layer,
• the diode region includes an anode layer of the second conductivity type in the surface layer of the drift layer,
• the termination region includes a well layer of the second conductivity type in the surface layer of the drift layer,
• an impurity concentration profile of impurities of the second conductivity type in the base layer and an impurity concentration profile of impurities of the second conductivity type in the anode layer in a direction along an upper surface of the drift layer cyclically fluctuate at a same depth, and
• the impurity concentration profile of the base layer and the impurity concentration profile of the anode layer are different.