Silicon carbide device with metallic interface layers and method of manufacturing

A method of manufacturing a semiconductor device, the method comprising:

• forming a trench extending from a first surface into a silicon carbide body;
• forming a first doped region and an oppositely doped second doped region in the silicon carbide body;
• forming a lower layer structure that completely covers sidewalls of the trench;
• filling a space in the trench left by the lower layer structure with a first fill part;
• and
• forming an upper layer stack along a collar portion of the first surface directly next to the trench,
• wherein the upper layer stack covers the first fill part,
• wherein the first doped region and the upper layer stack are in direct contact along the first surface,
• wherein the second doped region and the lower layer structure are in direct contact along the sidewalls.