Semiconductor device with anode trench
AssigneeWill Semiconductor (Shanghai) Co. Ltd.
InventorsTetsuya Okada, Kikuo Okada, Hiroki Arai
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Abstract
A semiconductor device includes: an anode electrode, formed on a front surface of a semiconductor substrate; a cathode electrode, formed on a back surface; a P layer, formed on the anode electrode side; an N layer, formed on the cathode electrode side; an N+ layer, arranged between the P layer and the N layer and having a higher carrier concentration than the N layer; and an anode trench, which extends from the front surface of the semiconductor substrate toward the back surface side thereof and extends to the N+ layer through the P layer, and in which an insulating film is formed between the peripheral N+ layer, and a conductive material arranged inside is connected to the anode electrode.
Claims3
A semiconductor device, comprising:
- a semiconductor substrate;
- an anode electrode, formed on a surface of the semiconductor substrate on one side;
- a cathode electrode, formed on a surface of the semiconductor substrate on the other side;
- a P layer, formed on the anode electrode side in the semiconductor substrate;
- an N layer, formed on the cathode electrode side of the P layer in the semiconductor substrate;
- an N+ layer, arranged between the P layer and the N layer and having a higher carrier concentration than the N layer;
- and
- an anode trench, which extends from the surface of the semiconductor substrate on one side toward the surface on the other side and extends to the N+ layer through the P layer, wherein an insulating film is formed in the anode trench to cover an inner wall of the anode trench, and a conductive material arranged inside the anode trench so that insulating film is formed between the N+ layer and the conductive material, wherein the anode trench surrounds a periphery of the P layer in a plane view.
Dependencies are inferred from the claim text.