Deposition of gate lines and gate line extensions on a semiconductor substrate
AssigneeUnited Microelectronics Corp.
InventorsPurakh Raj Verma, Su Xing, Jinyu Liao
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate having an active area, a first gate line extending along a first direction on the active area, a first gate line extension adjacent to the first gate line and outside the active area, a second gate line extending along the first direction on the active area and adjacent to the first gate line, and a second gate line extension adjacent to the second gate line and outside the active area. Preferably, the active area includes a first indentation and a second indentation, in which the first gate line extension overlaps the first indentation and the second gate line extension overlaps the second indentation.
Claims15
A semiconductor device, comprising:
- a substrate comprising an active area, wherein the active area comprises a first indentation and a second indentation;
- a first gate line extending along a first direction on the active area;
- a first gate line extension adjacent to a long side of the first gate line and outside the active area and overlapping the first indentation;
- a second gate line extending along the first direction on the active area and adjacent to the first gate line;
- and
- a second gate line extension adjacent to the second gate line and outside the active area, wherein the second gate line extension overlaps the second indentation.
A semiconductor device, comprising:
- a substrate comprising a first active area and a second active area;
- a first gate line and a second gate line extending along a first direction on the first active area;
- a third gate line and a fourth gate line extending along the first direction on the second active area, wherein the second gate line and the third gate line are parallel and the second gate line is between the first gate line and the third gate line;
- and
- a first gate line extension extending along a second direction between the second gate line and the third gate line and not between the first gate line and the second gate line.
Dependencies are inferred from the claim text.