Back to results
US 12,593,467 B2Granted
Thin film semiconductor switching device
AssigneeZinite Corporation
InventorsDouglas W. Barlage, Lhing Gem Shoute, Kenneth C. Cadien, Alex Munnlick Ma, Eric Wilson Milburn
Life of this patent
Estimating the term…
Abstract
Novel semiconductor devices are taught. The novel devices include a thin film transistor (TFT) with an n-type semiconductor layer to form a channel between a source and a drain. The TFT further includes a source-channel interfacial member adjacent to at least the source contact of the device to provide depletion layer control of the operation of the TFT.
Claims26
A method of making a thin-film transistor, the method comprising:
- forming a well in a thin-film structure, wherein the thin-film structure includes a source contact and a drain contact;
- forming a layer of n-type semiconductor material over the thin-film structure within the well and outside the well;
- forming a layer of dielectric material over the layer of n-type semiconductor material within the well and outside the well;
- forming a layer of gate material over the layer of dielectric material within the well and outside the well;
- and
- removing portions of the layer of n-type semiconductor material, the layer of dielectric material, and the layer of gate material that are outside the well;
- wherein portions of the layer of n-type semiconductor material, the layer of dielectric material, and the layer of gate material remaining within the well are operable with the source contact and the drain contact as the thin-film transistor.
4 more elements
A thin-film transistor comprising:
- a thin-film structure including a source contact and a drain contact;
- a layer of n-type semiconductor material formed within a well in the thin-film structure;
- a layer of dielectric material formed over the layer of n-type semiconductor material within the well;
- a layer of gate material formed over the layer of dielectric material within the well;
- and
- a source-channel interfacial member formed over the source contact;
- wherein no portion of the layer of n-type semiconductor material, the layer of dielectric material, and the layer of gate material extends outside the well.
4 more elements
A stack of thin-film transistors comprising:
- two or more thin-film transistors stacked vertically and separated by insulating and/or dielectric material, each of the two or more thin-film transistors including:
- a thin-film structure including a source contact and a drain contact;
- a layer of n-type semiconductor material formed within a well in the thin-film structure;
- a layer of dielectric material formed over the layer of n-type semiconductor material within the well;
- a layer of gate material formed over the layer of dielectric material within the well;
- and
- wherein the layer of n-type semiconductor material, the layer of dielectric material, and the layer of gate material are flush with an opening of the well.
4 more elements
A thin-film transistor comprising:
- a thin-film structure including a source contact and a drain contact;
- a layer of n-type semiconductor material formed within a well in the thin-film structure;
- a layer of dielectric material formed over the layer of n-type semiconductor material within the well;
- and
- a layer of gate material formed over the layer of dielectric material within the well;
- wherein no portion of the layer of n-type semiconductor material, the layer of dielectric material, and the layer of gate material extends outside the well;
- and
- wherein the drain contact is positioned vertically with respect to the source contact.
5 more elements
A thin-film transistor comprising:
- a thin-film structure including a source contact and a drain contact;
- a layer of n-type semiconductor material formed within a well in the thin-film structure;
- a layer of dielectric material formed over the layer of n-type semiconductor material within the well;
- a layer of gate material formed over the layer of dielectric material within the well;
- and
- a layer of gate tuning material formed over the layer of dielectric material within the well;
- wherein no portion of the layer of n-type semiconductor material, the layer of dielectric material, and the layer of gate material extends outside the well.
4 more elements
Dependencies are inferred from the claim text.