IGBT and diode with lifetime control regions

A semiconductor device comprising:

• a semiconductor substrate including an IGBT region and a diode region;
• a first electrode provided on an upper surface of the semiconductor substrate;
• and
• a second electrode provided on a back surface that is an opposite side of the upper surface of the semiconductor substrate,
• wherein the diode region includes an n-type drift layer, a p-type anode layer provided on an upper surface side of the drift layer, and an n-type cathode layer provided on a back surface side of the drift layer,
• a first lifetime control region within the drift layer, the first lifetime control region having crystal defect density higher than crystal defect density of other portions of the drift layer and including protons is provided on a back surface side relative to a center in a thickness direction of the semiconductor substrate, and
• a maximum value of donor concentration of the first lifetime control region is equal to or less than 10 times of donor concentration of the other portions of the drift layer.