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US 12,593,458 B2Granted
Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu, Alexander Kalnitsky
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Abstract
A semiconductor device includes a substrate, a bottom electrode, a ferroelectric layer, a noble metal electrode, and a non-noble metal electrode. The bottom electrode is over the substrate. The ferroelectric layer is over the bottom electrode. The noble metal electrode is over the ferroelectric layer. The non-noble metal electrode is over the noble metal electrode.
Claims20
A semiconductor device, comprising:
- a substrate;
- a bottom electrode over the substrate;
- a ferroelectric layer over the bottom electrode;
- a noble metal electrode over the ferroelectric layer;
- a non-noble metal electrode over the noble metal electrode, wherein the non-noble metal electrode has a first surface facing the noble metal electrode and a second surface opposing the first surface, and a sidewall of the noble metal electrode and a sidewall of the non-noble metal electrode are substantially coterminous;
- and
- a hard mask over and in contact with the second surface of the non-noble metal electrode.
4 more elements
A semiconductor device, comprising:
- a substrate;
- a bottom electrode over the substrate;
- a ferroelectric layer over the bottom electrode;
- a noble metal oxide layer over the ferroelectric layer;
- a noble metal electrode over and in contact with the noble metal oxide layer;
- and
- a non-noble metal electrode over and in contact with the noble metal electrode, wherein a sidewall of the noble metal electrode and a sidewall of the non-noble metal electrode are substantially coterminous.
4 more elements
A semiconductor device, comprising:
- a substrate;
- a bottom electrode over the substrate;
- a ferroelectric layer over the bottom electrode;
- a noble metal electrode over the ferroelectric layer;
- and
- a non-noble metal electrode over the noble metal electrode, wherein the noble metal electrode spaces the non-noble metal electrode apart from the ferroelectric layer, and a sidewall of the noble metal electrode and a sidewall of the non-noble metal electrode are substantially coterminous.
3 more elements
Dependencies are inferred from the claim text.