Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device having a first region in which a first MOSFET is formed, a second region in which a second MOSFET is formed and a third region in which a ferroelectric memory cell is formed, the method comprising:

• (a) forming a second gate dielectric film on a semiconductor substrate in the first region, the second region and the third region;
• (b) after the (a), selectively removing the second gate dielectric film in the first region;
• (c) after the (b), forming a first gate dielectric film having a thinner thickness than the second gate dielectric film on the semiconductor substrate in the first region;
• (d) after the (c), forming a protective film on the first gate dielectric film in the first region, the second gate dielectric film in the second region and the second gate dielectric film in the third region;
• (e) after the (d), selectively removing the protective film in the third region;
• (f) after the (e), selectively removing the second gate dielectric film in the third region;
• (g) after the (f), forming a paraelectric film having a thinner thickness than the second gate dielectric film on the semiconductor substrate in the third region;
• (h) after the (g), forming an amorphous film formed of a material including a metal oxide and a first element on the protective film in the first region, the protective film in the second region and the paraelectric film in the third region;
• (i) after the (h), forming a metal film on the amorphous film in the first region, the second region and the third region;
• (j) after the (i), crystallizing the amorphous film to form a ferroelectric film by performing a heat treatment;
• and
• (k) after the (j), selectively removing the metal film and the ferroelectric film in the first region and the second region.