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US 12,593,453 B2Granted
Ferroelectric memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsKiheun Lee, Yongseok Kim, Hyuncheol Kim, Daewon Ha
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Abstract
A ferroelectric memory device includes a channel layer, a gate insulation layer on the channel layer, and a gate electrode layer on the gate insulation layer. The gate insulation layer includes a ferroelectric inductive layer and a ferroelectric stack structure on the ferroelectric inductive layer, and the ferroelectric stack structure is stacked in an order or reverse order of a ferroelectric layer and a non-ferroelectric layer.
Claims20
A ferroelectric memory device, comprising:
- a channel layer;
- a gate insulation layer on the channel layer;
- and
- a gate electrode layer on the gate insulation layer, the gate insulation layer including:
- a ferroelectric inductive layer, and
- a ferroelectric stack structure on the ferroelectric inductive layer, the ferroelectric stack structure including a stack of a ferroelectric layer and a non-ferroelectric layer:
- wherein at least one of the ferroelectric inductive layer, the ferroelectric layer or the non-ferroelectric layer includes a two-dimensional material.
4 more elements
A ferroelectric memory device, comprising:
- a channel layer;
- a gate insulation layer on the channel layer;
- and
- a gate electrode layer on the gate insulation layer, the gate insulation layer including:
- a ferroelectric inductive layer, and
- a ferroelectric stack structure on the ferroelectric inductive layer, the ferroelectric stack structure having a stack of a ferroelectric layer and a non-ferroelectric layer and including a two-dimensional transition metal dichalcogenide layer.
3 more elements
A ferroelectric memory device, comprising:
- a channel layer;
- a gate insulation layer on the channel layer;
- and
- a gate electrode layer on the gate insulation layer, the gate insulation layer including:
- a ferroelectric inductive layer, and
- a ferroelectric stack structure on the ferroelectric inductive layer, the ferroelectric stack structure including a stack of a non-ferroelectric layer and a ferroelectric layer,
- wherein the ferroelectric inductive layer includes a first ferroelectric inductive layer, an oxygen-reactive layer, and a second ferroelectric inductive layer, which are sequentially stacked.
4 more elements
Dependencies are inferred from the claim text.