Semiconductor structure with enhances strength and manufacturing method thereof
AssigneeMacronix International Co., Ltd.
InventorChia-Tze Huang
Life of this patent
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Abstract
A semiconductor structure including a substrate, a stacked structure, a support pillar, and a channel pillar is provided. The substrate includes a peripheral region and an array region. The stacked structure is located on the substrate. The support pillar is located in the peripheral region. The support pillar passes through the stacked structure. The channel pillar is located in the array region. The channel pillar passes through the stacked structure. A thickness of the support pillar is greater than a thickness of the channel pillar.
Claims19
A semiconductor structure, comprising:
- a substrate, comprising a peripheral region and an array region;
- a stacked structure, located on the substrate;
- a support pillar, located in the peripheral region and passing through the stacked structure;
- and
- a channel pillar, located in the array region and passing through the stacked structure, wherein a thickness of the support pillar is greater than a thickness of the channel pillar, and
- the thickness of the support pillar is 8 times to 15 times the thickness of the channel pillar.
A manufacturing method of a semiconductor structure, comprising:
- providing a substrate, wherein the substrate comprises a peripheral region and an array region;
- forming a stacked structure on the substrate;
- forming a support pillar in the peripheral region, wherein the support pillar passes through the stacked structure;
- and
- forming a channel pillar in the array region, wherein the channel pillar passes through the stacked structure, a thickness of the support pillar is greater than a thickness of the channel pillar, and
- the thickness of the support pillar is 8 times to 15 times the thickness of the channel pillar.
Dependencies are inferred from the claim text.