US 12,593,440 B2Granted

Semiconductor device including single crystal semiconductor pattern with complementary structure

AssigneeSamsung Electronics Co., Ltd.

InventorsJeonil Lee, Kyunghwan Lee, Min Hee Cho

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Abstract

A semiconductor device includes a first single crystal semiconductor pattern including a first source/drain region, a second source/drain region, and a first vertical channel region between the first source/drain region and the second source/drain region, the second source/drain region being at a higher level than the first source/drain region; a first gate electrode facing a first side surface of the first single crystal semiconductor pattern; a first gate dielectric layer, the first gate dielectric layer including a portion between the first single crystal semiconductor pattern and the first gate electrode; and a complementary structure in contact with a second side surface of the first single crystal semiconductor pattern, wherein the complementary structure includes an oxide semiconductor layer.

Claims20

Dependent claims

A semiconductor device, comprising:

a first single crystal semiconductor pattern including a first source/drain region, a second source/drain region, and a first vertical channel region between the first source/drain region and the second source/drain region, the second source/drain region being at a higher vertical level than the first source/drain region;
a first gate electrode facing a first side surface of the first single crystal semiconductor pattern;
a first gate dielectric layer, the first gate dielectric layer including a portion between the first single crystal semiconductor pattern and the first gate electrode;
a complementary structure in contact with and at the same vertical level along a horizontal plane as a second side surface of the first single crystal semiconductor pattern at a level of the first vertical channel region;
and
a lower conductive line disposed below the first single crystal semiconductor pattern, the first gate electrode, and the complementary structure,
wherein the complementary structure includes an oxide semiconductor layer,
wherein the lower conductive line extends in a first direction and is electrically connected to the first single crystal semiconductor pattern, and
wherein the first single crystal semiconductor pattern is disposed, in the first direction and at the vertical level along the horizontal plane, between the complementary structure and the first gate electrode.

6 more elements

A semiconductor device, comprising:

a first conductive line and a second conductive line at a first vertical level, the first conductive line and the second conductive line being parallel to each other;
a first single crystal semiconductor pattern and a second single crystal semiconductor pattern at the first vertical level and spaced apart from each other;
a complementary structure between the first single crystal semiconductor pattern and the second single crystal semiconductor pattern in a first direction, the complementary structure including an oxide semiconductor layer;
and
lower conductive line disposed below the first conductive line, the second conductive line, the first single crystal semiconductor pattern, the second single crystal semiconductor pattern, and the complementary structure,
wherein the first single crystal semiconductor pattern, the second single crystal semiconductor pattern, and the complementary structure are between the first conductive line and the second conductive line along a horizontal plane at the first vertical level, and
wherein the lower conductive line extends in the first direction and is electrically connected to the first single crystal semiconductor pattern and the second single crystal semiconductor pattern.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/200,135Filed 22 May 2023
Priority: KR 10-2022-006337624 May 2022
Published: US 2023/0389290 A130 Nov 2023
Granted: 31 Mar 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10B 12/315
Having a storage electrode stacked over the transistor: with the capacitor higher than a bit line
H10D 30/6728
Thin-film transistors [TFT]: vertical TFTs
H10B 12/05
For one transistor one-capacitor [1T-1C] memory cells: making the transistor
H10B 12/482
Data lines or contacts therefor: bit lines