Active pixel circuit, image sensor, and electronic device
AssigneeWuhan Xinxin Semiconductor Manufacturing Co., Ltd.
InventorsJun Zhou, Peng Sun, Daohong Yang
Life of this patent
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AssigneeWuhan Xinxin Semiconductor Manufacturing Co., Ltd.
InventorsJun Zhou, Peng Sun, Daohong Yang
Estimating the term…
An active pixel circuit, an image sensor and an electronic device are disclosed. The active pixel circuit has a photodiode and at least three MOS transistors. At least one of the MOS transistors serves as a transfer transistor, and at least another one of the MOS transistors serves as a reset transistor. Moreover, at least yet another one of the MOS transistors serves as other transistor(s). The transfer transistor has a higher threshold voltage and smaller off-state leakage current under operating voltage than each other MOS transistor. With this design, the high-threshold, low-leakage characteristics of the transfer transistor reduce storage distortion of the photodiode and signal readout distortion, resulting in less read noise and lower power consumption of the active pixel circuit. Meanwhile, the low-threshold, high-leakage (i.e., high-on-current) characteristics of the other MOS transistors impart an increased reading speed of the active pixel circuit.
An active pixel circuit comprising a photodiode and at least three MOS transistors, at least one of the MOS transistors serving as a transfer transistor, at least another one of the MOS transistors serving as a reset transistor, at least yet another one of the MOS transistors serving as other transistor(s), the transfer transistor connected to the photodiode and configured to transmit a photoelectric signal from the photodiode, the reset transistor connected to a terminal of a respective one of the transfer transistor(s) for outputting the photoelectric signal and configured to reset the active pixel circuit, wherein each transfer transistor has a higher threshold voltage than each other MOS transistor, and each transfer transistor has a smaller off-state leakage current under operating voltage than each other MOS transistor,
An active pixel circuit comprising a photodiode and at least three MOS transistors, the at least three MOS transistors comprising at least one first MOS transistor, at least one second MOS transistor, and at least one third MOS transistor,
Dependencies are inferred from the claim text.