Power supply semiconductor device, including a delay circuit to protect power transistor
AssigneeRohm Co., Ltd.
InventorIsao Takobe
Life of this patent
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Abstract
Disclosed herein is a power supply semiconductor device used in a switched capacitor converter including a plurality of power transistors and a plurality of capacitors, the switched capacitor converter configured to turn on and off the plurality of power transistors according to a predetermined pattern to generate an output voltage from an input voltage. The power supply semiconductor device includes a control block configured to generate a control signal for designating ON or OFF of each of the power transistors, and a drive block connected to a gate of each of the power transistors and configured to drive the gate of each of the power transistors according to the control signal to turn on or off each of the power transistors.
Claims9
A power supply semiconductor device used in a switched capacitor converter including a plurality of power transistors and a plurality of capacitors, the switched capacitor converter configured to turn on and off the plurality of power transistors according to a predetermined pattern to generate an output voltage from an input voltage, the power supply semiconductor device comprising:
- a control block configured to generate a control signal for designating ON or OFF of each of the plurality of power transistors;
- and
- a drive block connected to a gate of each of the plurality of power transistors and configured to drive the gate of each of the plurality of power transistors according to the control signal to turn on or off each of the plurality of power transistors, wherein
- the drive block includes a target drive circuit corresponding to a target power transistor that is any one of the plurality of power transistors, the target drive circuit is connected to the gate of the target power transistor and configured to supply a gate signal to the target power transistor according to a target control signal that is the control signal for the target power transistor,
- the target drive circuit includes a detection circuit configured to output a detection signal corresponding to a drain-source voltage of the target power transistor after a gate-source voltage saturates the target power transistor, and
- the target drive circuit generates the gate signal for the target power transistor according to the target control signal and the detection signal.
Dependencies are inferred from the claim text.