Substrate processing apparatus and method
AssigneeSemes Co., Ltd.
InventorsSunjoo Park, Hyunjong Shim, Sangmin Mun, Kyungseok Min, Hwan Jung, Nayeon Lee
Life of this patent
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Abstract
Provided is a substrate processing apparatus including a chamber having a processing space therein, a supporting unit arranged in the processing space, having a substrate located thereon, and including a label material layer including a label material therein, a plasma source configured to generate plasma from a processing gas in the processing space, and a measurement apparatus configured to detect the label material, wherein, when the supporting unit is etched to a depth that is greater than or equal to a first depth, the label material layer is exposed.
Claims14
A substrate processing apparatus comprising:
- a chamber having a processing space therein;
- a supporting unit arranged in the processing space, having a substrate located thereon, and including a label material layer including a label material therein;
- a plasma source configured to generate plasma from a processing gas in the processing space;
- and
- an optical measurement apparatus configured to detect exposure of the label material by analyzing a wavelength of the label material when the label material layer is exposed, wherein the label material emits a wavelength that is outside a wavelength of a band of the plasma or the processing gas,
- wherein, the label material layer is exposed when the supporting unit is etched to a depth that is greater than or equal to a first depth, and
- wherein the processing gas includes a gas for dry cleaning, and the label material includes at least one selected from the group consisting of Helium (He) and Neon (Ne).
A substrate processing apparatus comprising:
- a chamber having a processing space therein;
- a supporting unit arranged in the processing space, supporting a substrate, and including a label material layer buried therein;
- a plasma source configured to generate plasma from a processing gas in the processing space;
- and
- an optical measurement apparatus configured to detect exposure of a label material by analyzing a wavelength of the label material when the label material is exposed,
- wherein the label material layer is exposed by etching of the supporting unit,
- wherein the label material emits a wavelength that is outside a wavelength of a band of the plasma or the processing gas,
- wherein when the measurement apparatus detects the label material, a process is stopped, and the supporting unit is replaced, and
- wherein the processing gas includes a gas for dry cleaning, and the label material includes at least one selected from the group consisting of Helium (He) and Neon (Ne).
Dependencies are inferred from the claim text.