Substrate processing apparatus and substrate processing method using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHakyoung Kim, Minyoung Hur, Sumin Park, Daehyun Lee
Life of this patent
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Abstract
Disclosed are substrate processing apparatuses and methods. The substrate processing apparatus comprises a chuck that supports a substrate, an insulator ring that surrounds the chuck, a focus ring on the insulator ring, and a ground ring outside the insulator ring. The ground ring includes a ground ring body and an extension ring on the ground ring body. A width of the extension ring is less than that of the ground ring body. An inner lateral surface of the extension ring is more outwardly than that of the ground ring body. A difference in level between a top of the extension ring and a top surface of the chuck is in a range of about 52 mm to about 60 mm.
Claims15
A substrate processing apparatus, comprising:
- a chuck configured to support a substrate;
- an insulator ring that surrounds the chuck;
- a focus ring on the insulator ring;
- and
- a ground ring outside the insulator ring,
- wherein the ground ring includes:
- a ground ring body;
- and
- an extension ring on the ground ring body,
- wherein a width of the extension ring in a horizontal and radial direction is less than a width of the ground ring body in the horizontal and radial direction,
- wherein an inner lateral surface of the extension ring is positioned farther than an inner lateral surface of the ground ring body from a center point of the ground ring, and
- wherein a top surface of the extension ring is positioned lower than a top surface of the chuck by a vertical distance in a range of about 52 mm to about 60 mm.
A substrate processing apparatus, comprising:
- a chuck that has a plasma electrode;
- an insulator ring that surrounds the chuck;
- a focus ring on the insulator ring;
- a cover ring that surrounds the focus ring;
- a ground ring outside the insulator ring;
- a power delivery conductor line below the focus ring;
- a first power source configured to apply a first power to the plasma electrode;
- and
- a second power source configured to apply a second power to the power delivery conductor line,
- wherein the power delivery conductor line includes:
- a first conductive line that vertically extends through the insulator ring between the chuck and the cover ring;
- and
- a second conductive line connected to a bottom end of the first conductive line, the second conductive line inwardly extending in a horizontal direction from the bottom end of the first conductive line,
- wherein the ground ring includes:
- a ground ring body;
- and
- an extension ring on the ground ring body,
- wherein a width of the extension ring is less than a width of the ground ring body,
- wherein an inner lateral surface of the extension ring is more outwardly than an inner lateral surface of the ground ring body,
- wherein the cover ring extends for a vertical distance greater than a vertical distance of the first conductive line,
- wherein a level of a top surface of the ground ring is lower than a level of a bottom surface of the second conductive line, and
- wherein the bottom surface of the cover ring is in contact with a top surface of the ground ring body.
Dependencies are inferred from the claim text.