Actively controlled gas inject for process temperature control

A process chamber flow apparatus for use in semiconductor processing comprising:

• an inject assembly comprising:
• an inject body;
• a first gas inlet configured to flow a first gas through the inject body;
• a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet;
• and
• an inject casing, the inject casing surrounding the inject assembly;
• an inductive heater coupled to the inject assembly, the inductive heater configured to heat a gas, the inductive heater comprising:
• a heater housing;
• a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end;
• an inductive coil disposed around the graphite rod;
• and
• a second gas inlet configured to flow a second gas between the heater housing and the graphite rod, the second gas inlet disposed at the distal end and fluidly connected to the plurality of flow channels of the inject assembly.

A process chamber system comprising:

• a process chamber having a chamber volume therein;
• a substrate support;
• a pre-heat ring disposed in the chamber volume, the substrate support surrounding the pre-heat ring;
• an inject assembly comprising:
• an inject body;
• a first gas inlet configured to flow a first gas through the inject body;
• a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet;
• and
• an inductive heater coupled to the inject assembly, the inductive heater configured to heat a gas, the inductive heater comprising:
• a heater housing;
• a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end;
• an inductive coil disposed around the graphite rod;
• and
• a second gas inlet configured to flow a second gas between the heater housing and the graphite rod, the second gas inlet disposed at the distal end and fluidly connected to the plurality of flow channels of the inject assembly.