Systems and methods for improving radiation tolerance of three- dimensional flash memory

A method of storing data in an electronic device, comprising:

• receiving data to be stored in a memory of the electronic device, the memory including a three-dimensional (3D) flash memory structure having stacked memory cells including at least a first plurality of memory cells and a second plurality of memory cells, wherein the first plurality of memory cells are more susceptible to radiation than the second plurality of memory cells;
• selecting a memory location within the 3D flash memory structure to store the data;
• selecting a number of error correction code (ECC) bits to be encoded with the data based on the selected memory location, wherein the selected number of ECC bits is different based on whether the selected memory location is in the first plurality of memory cells or the second plurality of memory cells;
• encoding the selected number of ECC bits with the data to enable error correction of the data;
• and
• storing the data and the encoded ECC bits at the selected memory location.

A method of storing data in an electronic device, comprising:

• receiving data to be stored in a memory of the electronic device, the memory including a three-dimensional (3D) flash memory structure having stacked memory cells including at least a first plurality of memory cells and a second plurality of memory cells, wherein the first plurality of memory cells are more susceptible to radiation than the second plurality of memory cells;
• associating a priority value with the data, wherein the priority value is indicative of a priority assigned to the data;
• selecting a memory location within the 3D flash memory structure to store the data based on the associated priority level;
• and
• storing the data at the selected memory location.