Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Sheng Chang, Yao-Jen Yang
Life of this patent
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Abstract
A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device includes a first transistor, the second transistor, a first circuit, a second circuit and a third transistor. The second transistor is electrically connected to the first transistor, wherein gates of the first transistor and the second transistor are electrically connected to a word line. The first circuit is electrically connected between a drain of the first transistor and a first bit line. The second circuit is electrically connected between a drain of the second transistor and a second bit line. The third transistor is electrically connected between the drain of the first transistor and the drain of the second transistor.
Claims20
A semiconductor device, comprising:
- a word line;
- a first bit line;
- a second bit line;
- a first transistor;
- a second transistor, wherein gates of the first transistor and the second transistor are electrically connected to the word line;
- a first circuit, electrically connected between a drain of the first transistor and the first bit line;
- a second circuit, electrically connected between a drain of the second transistor and the second bit line;
- and
- a third transistor electrically connected between the drain of the first transistor and the drain of the second transistor,
- wherein a size of the third transistor is different from a size of the first transistor and the second transistor.
A semiconductor device, comprising:
- a word line;
- a first bit line;
- a second bit line;
- a first cascode gate line;
- a first transistor;
- a second transistor, electrically connected to the first transistor, wherein gates of the first transistor and the second transistor are electrically connected to the word line, and sources of the first transistor and the second transistor are electrically connected to power supplies;
- a third transistor electrically connected to drains of the first transistor and the second transistor;
- a first circuit, electrically connected between a drain of the first transistor and the first bit line;
- a second circuit, electrically connected between a drain of the second transistor and the second bit line;
- a fourth transistor, electrically connected between the first transistor and the first circuit, wherein the fourth transistor is electrically connected to the first cascode gate line and the first bit line.
A method of operating a semiconductor device, comprising:
- setting a first bit line signal on a first bit line;
- setting a first word line signal on a first word line;
- setting a first power gate line signal on a first power gate line, wherein setting the first power gate line signal on the first power gate line comprises:
- turning on at least a first transistor in response to setting the first power gate line signal;
- setting a second bit line signal on a second bit line;
- setting a second word line signal on a second word line;
- setting a second power gate line signal on a second power gate line, wherein setting the second power gate line signal on the second power gate line comprises:
- turning on at least a second transistor in response to setting the second power gate line signal;
- and
- setting a logical data value in a memory cell thereby performing a programming operation of the memory cell.
Dependencies are inferred from the claim text.