Memory devices with program verify levels based on compensation values

A memory device comprising:

• an array of memory cells;
• and
• a controller configured to access the array of memory cells to program a selected memory cell of the array of memory cells to a target level based on a compensation value included within a program command for the selected memory cell, the compensation value selected from a first value, a second value different from the first value, a third value different from the first and second values, and a fourth value different from the first, second, and third values, wherein the first value is selected in response to a further memory cell of the array of memory cells adjacent to the selected memory cell being programmed to or will be programmed to a first level or a second level greater than the first level, and wherein the second value is selected in response to the further memory cell being programmed to or will be programmed to a third level greater than the second level or a fourth level greater than the third level,
• wherein the controller is further configured to:
• sense a threshold voltage of the selected memory cell;
• in response to the compensation value having the first value and the threshold voltage being greater than a first program verify level, inhibit programming of the selected memory cell;
• and
• in response to the compensation value having the second value and the threshold voltage being greater than a second program verify level less than the first program verify level, inhibit programming of the selected memory cell.