Data storage device and method for managing a hot count difference in sub-block mode
AssigneeSanDisk Technologies LLC
InventorsAkash Nigam, Manoj M. Shenoy, Lakshmi Sowjanya Sunkavelli
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Abstract
A block of memory in a data storage device can be partitioned into two or more sub-blocks, where each sub-block is independent of the other sub-blocks. If the program-erase counts of the sub-blocks are sufficiently low, the same programming voltage can be used to program each of the sub-blocks. However, for higher program-erase counts, disturb effects can create issues in using the same programming voltage. With the embodiments presented herein, the programming voltage of a given sub-block can be based on the program-erase count of the sub-block. This can avoid the need to compare program-erase counts of various sub-blocks and perform a relocation operation.
Claims19
A data storage device comprising:
- a memory comprising a block configured to be partitioned into two or more sub-blocks;
- and
- one or more processors, individually or in combination, configured to:
- determine whether a program-erase count of each sub-block exceeds a threshold;
- in response to determining that the program-erase count of each sub-block does not exceed the threshold, use a same programming voltage to program each sub-block;
- and
- in response to determining that the program-erase count of each sub-block exceeds the threshold, use an adaptive programming voltage to program each sub-block by, for each sub-block;
- determining a program-erase count of the sub-block;
- determining a programming voltage for the sub-block based on the program-erase count of the sub-block;
- and
- programming the sub-block using the programming voltage determined for the sub-block.
In a data storage device comprising a memory comprising a block that comprises two or more sub-blocks, a method comprising:
- determining whether a hot count of each sub-block exceeds a threshold;
- in response to determining that the hot count of each sub-block does not exceed the threshold, using a same programming voltage to program each sub-block;
- and
- in response to determining that the hot count of each sub-block exceeds the threshold, using an adaptive programming voltage to program each sub-block by, for each sub-block:
- determining a hot count of the sub-block;
- determining a changing an adaptive programming programing voltage to a level for the sub-block based on the hot count of the sub-block;
- and
- programming the sub-block using the programming voltage determined for the sub-block.
A data storage device comprising:
- a memory comprising a plurality of sub-blocks;
- and
- means for:
- determining whether a program-erase count of each sub-block exceeds a threshold;
- in response to determining that the program-erase count of each sub-block does not exceed the threshold, using a same programming voltage to program each sub-block;
- and
- in response to determining that the program-erase count of each sub-block exceeds the threshold, using an adaptive programming voltage to program each sub-block by, for each sub-block:
- determining a program-erase count of the sub-block;
- determining a programming voltage for the sub-block based on the program-erase count of the sub-block;
- and
- programming the sub-block using the programming voltage determined for the sub-block.
Dependencies are inferred from the claim text.