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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshiyuki Kurokawa, Masashi Fujita, Kazuaki Ohshima
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A semiconductor device with a novel structure is provided. The semiconductor device includes a register. The register includes a flip-flop and a plurality of data retention circuits. The flip-flop includes a first transistor in which a semiconductor layer including a channel formation region is silicon, an input terminal of the flip-flop is electrically connected to each of output terminals of the data retention circuits, and an output terminal of the flip-flop is electrically connected to each of input terminals of the data retention circuits. The data retention circuits include a second transistor in which a semiconductor layer including a channel formation region is an oxide semiconductor, and when the second transistor is in a non-conduction state, the data retention circuits have a function of retaining a potential corresponding to data corresponding to a plurality of tasks. A state control portion rewrites data that the flip-flop has on the basis of data retained in the data retention circuits in accordance with the plurality of tasks executed by a processor core.
A semiconductor device comprising a state control portion and a processor core,
Dependencies are inferred from the claim text.