Display device
AssigneeSharp Display Technology Corporation
InventorTadayoshi Miyamoto
Life of this patent
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Abstract
In a CMOS circuit provided as part of a drive circuit in a frame region, a second TFT including a second semiconductor layer formed of an oxide semiconductor includes a first gate electrode provided on one surface side of the second semiconductor layer with a first inorganic insulating film interposed therebetween, and a second gate electrode provided on the other surface side of the second semiconductor layer with a second inorganic insulating film interposed therebetween. The second TFT is configured to apply a negative voltage to the second gate electrode during an off period in which no voltage is applied to the first gate electrode.
Claims11
A display device comprising:
- a base substrate;
- and
- a thin film transistor layer provided on the base substrate, the thin film transistor layer comprising:
- a first thin film transistor formed of polysilicon and including a first semiconductor layer, and
- a second thin film transistor formed of an oxide semiconductor and including a second semiconductor layer,
- wherein a display region, in which an image is displayed, and a frame region surrounding the display region are provided,
- a complementary metal oxide film semiconductor circuit, obtained by combining the first thin film transistor and the second thin film transistor, is provided in the frame region as a part of a drive circuit,
- the second thin film transistor in the complementary metal oxide film semiconductor circuit includes:
- a first gate electrode provided on one surface side of the second semiconductor layer with a first inorganic insulating film interposed between the first gate electrode and the second semiconductor layer, and
- a second gate electrode provided on another surface side of the second semiconductor layer with a second inorganic insulating film interposed between the second gate electrode and the second semiconductor layer,
- during an OFF period of the second thin film transistor, a first voltage is applied to the first gate electrode and a second voltage is applied to the second gate electrode, the second voltage being lower than the first voltage, and
- during an ON period of the second thin film transistor, a third voltage is applied to the second gate electrode, the third voltage being higher than the second voltage.
Dependencies are inferred from the claim text.