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AssigneeeMemory Technology Inc.
InventorsTsung-Mu Lai, Chang-Chun Lung, Chia-Jung Hsu, Cheng-Yen Shen, Ching-Yuan Lin
Estimating the term…
A control method for a non-volatile memory is provided. After the non-volatile memory is enabled, a judging step is performed to judge whether the non-volatile memory enters a read mode, a program mode or an erase mode. If the judging result indicates that the non-volatile memory enters the read mode, the program mode or the erase mode, a worst threshold voltage of plural reference cells of the non-volatile memory is searched. Then, at least one of a control voltage for read action, a control voltage for program verify and a control voltage for erase verify is determined. Then, a read action, a program action or an erase action is performed on plural data cells of the non-volatile memory.
A control method for a non-volatile memory, the non-volatile memory comprising a memory cell array, the memory cell array comprising plural reference cells and plural data cells, the plural reference cells being maintained in a first storage state, the control method comprising steps of:
A control method for a non-volatile memory, the non-volatile memory comprising a memory cell array and a control voltage generator, the memory cell array comprising plural reference cells and plural data cells connected with the control voltage generator, each of the plural reference cells and each of the plural data cells comprising a storage device, the plural reference cells being maintained in a first storage state, and the control method comprising steps of:
Dependencies are inferred from the claim text.