Lithography contamination control
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChieh Hsieh, Tai-Yu Chen, Cho-Ying Lin, Heng-Hsin Liu, Li-Jui Chen, Shang-Chieh Chien
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChieh Hsieh, Tai-Yu Chen, Cho-Ying Lin, Heng-Hsin Liu, Li-Jui Chen, Shang-Chieh Chien
Estimating the term…
A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.
An extreme ultraviolet light lithography system, comprising:
A device, comprising:
A method of exposing a mask to an extreme ultraviolet light in a semiconductor fabrication process, the method comprising:
Dependencies are inferred from the claim text.